Performance estimation of InSb compound semiconductor detectors as a function of active area using alpha particles

Characterization of GaSb photodiode for gamma-ray detection

“…A few studies of smallbandgap materials, such as InAs (Z In = 49, Z As = 33) and InSb (Z In = 49, Z Sb = 51), have shown the successful detection of α-particles or soft X-rays at temperatures lower than 80 K, but hard X-ray or gamma-ray energies larger than 10 keV have not yet been detected to the best of our knowledge. [11][12][13][14] GaSb, as one of the popular III-V materials for optoelectronics, [15][16][17][18][19] exhibits a great potential to offer a high spectroscopic performance for a gamma-ray detector. Although lowtemperature operation would be required to minimize leakage noise induced by the small bandgap of GaSb (E g = 0.72 eV at 300 K), the relatively high Z (Z Ga = 31, Z Sb = 51) and low PCE of GaSb predicted using an empirical formula are favorable for high energy resolutions from soft X-ray to gamma-ray energies up to a few hundred keV.…”

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

“…While CdTe is the only semiinsulating lattice-matched substrate available for InSb growth, it is difficult, however, to avoid the formation of the In 2 Te 3 precipitates at the InSb/CdTe interface [43,44]. Hence, many alternative materials (viz., Si, GaAs, InP, sapphire, and mica) have been chosen as substrates for preparing InSb epifilms [2,[15][16][17][19][20][21][22][23][24][25][26][27][28][29][30][31][32] by molecular beam epitaxy, liquid-phase epitaxy [18,30], metalorganic chemical vapor deposition (MOCVD) [20][21][22]31], metalorganic magnetron sputtering [32,45], and two-step growth process [46] methods. Despite a large (14.6%) lattice mismatch between InSb and GaAs, the semi-insulating GaAs is considered as an attractive substrate due to high chemical stability and resistivity.…”

InAs avalanche photodiodes as X-ray detectors

“…InSb Schottky diodes fabricated from epitaxially grown crystals had been studied as radiation detectors [9][10][11]. Cooling the Schottky diode to 42 K, alpha particles (5.5 MeV in energy) were detected with 1.8 % FWHM [11].…”

“…InSb Schottky diodes fabricated from epitaxially grown crystals had been studied as radiation detectors [9][10][11]. Cooling the Schottky diode to 42 K, alpha particles (5.5 MeV in energy) were detected with 1.8 % FWHM [11]. These diodes also detected Gamma rays (59.5 keV in energy), however the gamma ray peaks were not resolved, due to noise caused by the extremely high detector's leakage currents even at cryogenic temperatures [9,10].…”