Photopeak detection by an InSb radiation detector made of liquid phase epitaxially grown crystals

Characterization of GaSb photodiode for gamma-ray detection

“…A few studies of smallbandgap materials, such as InAs (Z In = 49, Z As = 33) and InSb (Z In = 49, Z Sb = 51), have shown the successful detection of α-particles or soft X-rays at temperatures lower than 80 K, but hard X-ray or gamma-ray energies larger than 10 keV have not yet been detected to the best of our knowledge. [11][12][13][14] GaSb, as one of the popular III-V materials for optoelectronics, [15][16][17][18][19] exhibits a great potential to offer a high spectroscopic performance for a gamma-ray detector. Although lowtemperature operation would be required to minimize leakage noise induced by the small bandgap of GaSb (E g = 0.72 eV at 300 K), the relatively high Z (Z Ga = 31, Z Sb = 51) and low PCE of GaSb predicted using an empirical formula are favorable for high energy resolutions from soft X-ray to gamma-ray energies up to a few hundred keV.…”

Photon detection by an InSb compound semiconductor detector with reduced leakage current

“…The LPE crystal had p-type conductivity at temperatures below 100 K [7]. The electrical and growth properties of the LPE-InSb wafer are described in Ref.…”

“…The diffusion length shows the distance in which the carrier concentration generated by a radiation incident decreases to 37% of its original value [11]. The diffusion lengths of electrons and holes were 1.2 mm and 163 mm at 4.5 K, respectively [7,11,12]. In addition, we defined the charge collection efficiency in the depletion layer as unity [9].…”

“…The energy resolution of these detectors for 5.486 MeV-alpha-particles, however, rapidly decreased above 40 K, and these values were worse than 10%, because of the large leakage current [6]. In addition, the gamma-ray energy spectra obtained using these detectors had a large electrical noise [7].…”

Highly reversible lithiation/delithiation in indium antimonide with hybrid buffering matrix

“…Our study differs from previous studies that used intermetallic compounds as active materials in LIB anodes in the following ways. First, the synthetic process (HEBM) of InSb is much simpler and more cost‐effective than previous studies (eg, liquid phase epitaxy or solidification a melt from the liquid state) 35,36 . Second, the cyclic performance was greatly improved in the presence of the TiO 2 ‐C hybrid buffering matrix.…”