Articles you may be interested inFabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation J. Appl. Phys. 94, 6311 (2003); 10.1063/1.1621713 Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas J.
A new process to fabricate a silicon needle, whose tip radius is about 5 nm and aspect ratio is about 7, was developed. The silicon needles were fabricated by highly selective anisotropic dry etching. The etching mask was oxygen precipitation, which was formed by nitrogen ion implantation and the subsequent oxidation. The process is simple enough to be integrated with complementary metal-oxide-semiconductor (CMOS) circuits. The density of the silicon needle can be controlled by adjusting the dose for nitrogen ion implantation. The position of the silicon needle can be controlled by adjusting the position for nitrogen ion implantation, because silicon needles are formed only in the nitrogen ion implantation area. Furthermore, using these silicon needles as micro emitters, a field emission diode was fabricated. The Fowler-Nordheim plot shows that the field around the tip of the silicon needles was highly enhanced.
This work presents a new method for detecting oxygen precipitates in Si wafers. The method utilizes a highly selective reactive ion etching process. When a Si wafer containing oxygen precipitates is etched under the condition of high selectivity of silicon over silicon oxide, needle-shaped silicon cones can be formed below the oxygen precipitates, because they are hardly etched. Using this method, the depth distribution of the oxygen precipitates having diameters of at least 15 nm has been successfully evaluated by evaluating the number and height of the cones. It was also demonstrated that this method is effective in detecting oxygen precipitates remaining in the denuded zone.
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