In the race of fabricating solid‐state nano/microelectronic devices using 2D layered materials (LMs), achieving high yield and low device‐to‐device variability are the two main challenges. Electronic devices that drive currents in‐plane and homogeneously along the 2D‐LMs (i.e., transistors, memtransistors) are strongly affected by local defects (i.e., grain boundaries, wrinkles, thickness fluctuations, polymer residues), as they create inhomogeneities and increase the device‐to‐device variability, resulting in a poor performance at the circuit level. Here, it is shown that memristors are insensitive to most types of defects in 2D‐LMs, even when fabricated in academic laboratories that do not meet industrial standards. The reason is that the currents produced in these devices, which flow out‐of‐plane across the 2D‐LM, are always driven locally by the most conductive locations. Consequently, it is concluded that it is much easier to fabricate 2D‐LMs‐based solid‐state nano/microelectronic circuits using memristors than using transistors or memtransistors, not only due to the inherent simpler fabrication process (i.e., less lithography steps) but also because the local defects do not degrade the yield and variability of memristors considerably.

Different morphological one-dimensional ZnO:Ce nanostructures were synthesized on a large scale. The microstructures and vibrational properties were investigated by x-ray diffraction, electron microscopy, Raman spectroscopy, and infrared spectroscopy. The results show that Ce can effectively control the growth of ZnO nanostructures. The change of the morphology and local structure of ZnO under the influence of Ce results in the variation of vibrational properties. In Raman spectra of doped samples, some classical modes, such as A1 and E1 modes, disappear, and two anomalous modes at 527 and 667 cm−1 are observed, whose intensity decreases with the increase of synthesis temperature. In infrared spectra, some surface phonon modes appear. Compared with those of the undoped sample, all the normal modes observed in the Ce-doped samples blueshift, and the extent of the blueshift decreases with increasing synthesis temperature in the Raman and infrared spectra.

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Group I−III−VI ternary chalcogenides have attracted extensive attention as important functional semiconductors. Among them, Cu−In−S compounds have seen strong research interest due to their potential applications in high-efficiency solar cells. However, the controllable synthesis of Cu−In−S nanostructures with different phases is always difficult. In this research, zincblende CuInS 2 , wurtzite CuInS 2 , and spinel CuIn 5 S 8 could be selectively synthesized using spinel In 3−x S 4 as the precursor by a simple solvothermal method. X-ray powder diffraction was used to determine the phase and crystal structure, and transmission electron microscopy was employed to characterize the morphologies of the as-prepared samples. Experiments showed that the acidity−basicity of the reaction system and the coordination and reducibility of the capping ligands were crucial to the final phases of the products. The UV−vis−NIR spectra of the three phases all exhibited a broad-band absorption over the entire visible light and extending into the near-infrared region, and the zinc-blende, wurtzite, and spinel Cu−In−S nanocrystals showed band gaps of 1.55, 1.54, and 1.51 eV, respectively, which indicates their potential applications in thin-film solar cells.

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Nickel terephthalate is grown on Ni foam with high mass-loading and its electrochemical performance can be greatly enhanced by polyaniline electrodeposition.

Rare-earth orthochromites are extremely interesting because of their potential applications as multifunctional materials. However, it is still a great challenge for the general synthesis of nanostructured full rare-earth orthochromites series. Here, a facile and versatile solvothermal reduction strategy is successfully employed in the preparation of rare-earth chromites with quasi-hollow nanostructures. X-ray diffraction data show that all the products have the orthorhombic perovskite structure. The electron microscopy analysis reveals that the morphology of the product is seriously affected by the rare-earth ionic radius. Tube-like and vesicle-like structures can be formed for the larger and smaller rare-earth cationic radii, respectively. The experimental results suggest that the roomtemperature precursors of potassium rare-earth chromates serve as a self-template for the in situ reduction and formation of rare-earth orthochromites hollow structures. The magnetization studies demonstrate that all the products, as it would be expected, undergo a magnetic transition from paramagnetic to antiferromagnetic phase at the Néel temperature (T N1 ) attributed to Cr 3+ -Cr 3+ exchange and this critical temperature goes up linearly with an increase in the rare-earth ionic radius.Additionally, some samples exhibit a variety of fancy magnetic properties, including thermal hysteresis suggesting a first-order magnetic transition, magnetization reversal due to the antiparallel polarization of the R 3+ paramagnetic moments by the Cr 3+ canted antiferromagnetic ones, and magnetic exchange bias related to the spin reorientation transition of the Cr 3+ magnetic moments. † Electronic supplementary information (ESI) available: XRD patterns and SEM images of the typical room-temperature intermediates; TEM images of the typical 1200 C annealing sample; SEM images of LaCrO 3 , PrCrO 3 , NdCrO 3 and SmCrO 3 before and aer annealing; summary of the magnetic data based on the temperature dependence of the magnetization for all samples. See