Improved properties arise in transition metal dichalcogenide (TMDC) materials when they are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable fabrication of TMDCs/h-BN heterostructures by direct chemical vapor deposition (CVD) growth is highly desirable. Unfortunately, to achieve this experimentally is challenging. Ideal substrates for h-BN growth, such as Ni, become sulfides during the synthesis process. This leads to the decomposition of the pregrown h-BN film, and thus no TMDCs/h-BN heterostructure forms. Here, we report a thoroughly direct CVD approach to obtain TMDCs/h-BN vertical heterostructures without any intermediate transfer steps. This is attributed to the use of a nickel-based alloy with excellent sulfide-resistant properties and a high catalytic activity for h-BN growth. The strategy enables the direct growth of single-crystal MoS2 grains of up to 200 μm(2) on h-BN, which is approximately 1 order of magnitude larger than that in previous reports. The direct band gap of our grown single-layer MoS2 on h-BN is 1.85 eV, which is quite close to that for free-standing exfoliated equivalents. This strategy is not limited to MoS2-based heterostructures and so allows the fabrication of a variety of TMDCs/h-BN heterostructures, suggesting the technique has promise for nanoelectronics and optoelectronic applications.
Owing to the development of electronic devices moving toward high power density, miniaturization, and multifunction, research on thermal interface materials (TIMs) is become increasingly significant. Graphene is regarded as the most promising thermal management material owing to its ultrahigh in-plane thermal conductivity. However, the fabrication of high-quality vertical graphene (VG) arrays and their utilization in TIMs still remains a big challenge. In this study, a rational approach is developed for growing VG arrays using an alcohol-based electric-field-assisted plasma enhanced chemical vapor deposition. Alcohol-based carbon sources are used to produce hydroxyl radicals to increase the growth rate and reduce the formation of defects. A vertical electric field is used to align the graphene sheets. Using this method, high-quality and vertically aligned graphene with a height of 18.7 µm is obtained under an electric field of 30 V cm −1 . TIMs constructed with the VG arrays exhibit a high vertical thermal conductivity of 53.5 W m −1 K −1 and a low contact thermal resistance of 11.8 K mm 2 W −1 , indicating their significant potential for applications in heat dissipation technologies.
Magnetite (Fe3O4) is an attractive electrode material due to its high theoretical capacity, eco-friendliness, and natural abundance. However, its commercial application in lithium-ion batteries is still hindered by its poor cycling stability and low rate capacity resulting from large volume expansion and low conductivity. We present a new approach which makes use of supercritical carbon dioxide to efficiently anchor Fe3O4 nanoparticles (NPs) on graphene foam (GF), which was obtained by chemical vapor deposition in a single step. Without the use of any surfactants, we obtain moderately spaced Fe3O4 NPs arrays on the surface of GF. The particle size of the Fe3O4 NPs exhibits a narrow distribution (11 ± 4 nm in diameter). As a result, the composites deliver a high capacity of about 1200 mAh g(-1) up to 500 cycles at 1 C (924 mAh g(-1)) and about 300 mAh g(-1) at 20 C, which reaches a record high using Fe3O4 as anode material for lithium-ion batteries.
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