γ-phase aluminum oxide (γ-Al2O3) films are grown on MgO (100) wafers by metal organic chemical vapor deposition (MOCVD). Post-annealing process is conducted to study the influence of annealing temperature on the properties of the films. Structural analyses indicate that all the deposited and annealed films present a preferred growth orientation of γ-Al2O3 (220) along the MgO (200) direction. And the film annealed at 1100 °C exhibits the best film quality compared with those of the films grown and annealed at other temperatures. Scanning electron microscopy measurements also imply the best surface morphology for the γ-Al2O3 film annealed at 1100 °C, which is in good accordance with the structural analyses. Optical transmittance spectra show good transparency for all the deposited and annealed films in the visible wavelength region with an average transmittance value of 83.5%. The optical bandgaps are estimated to be in the range of 5.56–5.79 eV for the deposited and annealed films. Semiconductor films with high optical transmittance in the visible region as well as wide bandgaps are appropriate for the manufacture of transparent optoelectronic devices and ultraviolet optoelectronic devices.
Al-In-Sn-O (AITO) thin film refers to a novel wide-bandgap transparent conductive material, which is formed by doping the aluminum element into In-Sn-O material. It is of promising application in deep ultraviolet optoelectronic devices.
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are capable of impacting the optical and electrical properties of AITO thin film. Three groups of AITO thin film samples with different sputtering powers, sputtering pressures, and sputtering times were prepared with magnetron sputtering. The concentration ratio of
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in AITO samples was quantitatively analyzed with laser-induced breakdown spectroscopy (LIBS) technology. A single calibration curve was drawn based on the sputtering parameters of each group, and the comprehensive calibration curves of two concentration ratios under any sputtering parameters were plotted. The accuracy of the comprehensive calibration curve was determined with samples prepared under random sputtering parameters, and the energy dispersive x-ray spectroscopy analysis results were compared with the LIBS technical analysis results. The relative error was less than 5%, so the LIBS technical analysis was demonstrated to be accurate. By building the comprehensive calibration curve, a novel method to conduct rapid online analysis of AITO thin films and timely determination of photoelectrical properties is presented, and the new application of LIBS technology is developed in thin film semiconductor materials.
(Al0.55In0.45)2O3:Sn films were prepared on MgO (110) single crystalline substrates by high vacuum metal organic vapor phase epitaxy (MOVPE) method. Structural analysis showed that the (Al0.55In0.45)2O3:Sn films exhibited a variation...
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