Al-In-Sn-O (AITO) thin film refers to a novel wide-bandgap transparent conductive material, which is formed by doping the aluminum element into In-Sn-O material. It is of promising application in deep ultraviolet optoelectronic devices.
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are capable of impacting the optical and electrical properties of AITO thin film. Three groups of AITO thin film samples with different sputtering powers, sputtering pressures, and sputtering times were prepared with magnetron sputtering. The concentration ratio of
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in AITO samples was quantitatively analyzed with laser-induced breakdown spectroscopy (LIBS) technology. A single calibration curve was drawn based on the sputtering parameters of each group, and the comprehensive calibration curves of two concentration ratios under any sputtering parameters were plotted. The accuracy of the comprehensive calibration curve was determined with samples prepared under random sputtering parameters, and the energy dispersive x-ray spectroscopy analysis results were compared with the LIBS technical analysis results. The relative error was less than 5%, so the LIBS technical analysis was demonstrated to be accurate. By building the comprehensive calibration curve, a novel method to conduct rapid online analysis of AITO thin films and timely determination of photoelectrical properties is presented, and the new application of LIBS technology is developed in thin film semiconductor materials.
Nanocrystalline copper oxide films have The development ofp-type semiconductor is one of the been synthesized on glass by dc sputtering method. The key technologies for p-n junction based devices, such as effects of oxygen flow rate and deposition temperature diodes, transistors and light-emitting diodes [6]. Copper on the microstructure of nanocrystalline copper oxide oxide coating is known to show p-type conductivity and as a films were investigated. X-ray diffraction analysis shows consequence, it is attracting increasing attention. CuO is a that a broaden peak of Cu20 (111) was observed at the p-type semiconductor with a band gap of 1.21-1.51 eV and a deposition condition of DC power 150W, pressure 3.3Pa, monoclinic structure [7][8]. It has unique features such as low substrate temperature 200°C, Argon flow rate 10 sccm cost, non-toxicity, the abundant availability of copper, a and 02 flow rate lsccm. With increasing the oxygen flow theoretical solar cell efficiency of 18% and relatively rate to 3 -5 and 7sccm, CuO (-111) could be obtained at formation of the oxide layer. Copper oxide composite 100 and 2000C, respectively. The increase of oxygen flow systems are also attractive due to their super-conduction rate resulted in the film formation from Cu2O to CuO. properties. SEM pictures show that copper oxide films exhibit nanosize grains. X-ray diffraction patterns of CuO films in thisestudy, the effects o e flow rate and deposited at 50-2000C show that only (-111) plane is deposition temperature on the structure evolution and obtained. The SEM pictures show that the grain size s m increases with the deposition increases.
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