Effect of thermal annealing on the structural and optical properties of ZnGa2O4 films deposited on sapphire by magnetron sputtering

Xin, Yangmei; Gao, Z.; Shang, Xiao; Wu, Jiaping; Yu, Dan; Xiu, Junshan; Zhao, Li

doi:10.1016/j.jallcom.2022.167760

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…Compared with the XRD patterns of the prepared DBR substrate, the diffraction peaks locate at 2θ = 17.5 • , 28.0 • , 28.9 • , 31.4 • , 34.9 • , 38.0 • , 40.0 • , 41.9 • , 59.5 • which are not marked in the XRD spectra and simultaneously present in the prepared DBR, CH 3 NH 3 PbBr 3 /NP-GaN DBR and CH 3 NH 3 PbBr 3 /reference substrate are the diffraction peaks of the GaN, sapphire substrate and the GaN epitaxial impurities. The two highest diffraction peaks, located at 34.9 • and 41.9 • , are indexed to GaN (0002) and c-surface sapphire (0006) of the substrate [46]. Figure 5a is the XRD spectra of the CH3NH3PbBr3 crystals grown on the prepared DBR and reference substrates.…”

Section: Resultsmentioning

confidence: 99%

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

et al. 2023

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As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous distributed Bragg reflector based on GaN with a periodic structure using electrochemical etching methods. Considering the fact that hybrid perovskite materials are difficult to prepare on an inorganic GaN-based substrate, ultraviolet ozone treatment was implemented to enhance the surface activity of the prepared distributed Bragg reflector substrate. Cubic CH3NH3PbBr3 crystals with smooth surfaces and precise edges were successfully prepared on the ozone-treated distributed Bragg reflector substrate by a two-step immersion method in the air environment. The structural property of the prepared CH3NH3PbBr3 crystals was investigated using X-ray diffraction, scanning electron microscopy and Fourier-transform infrared spectroscopy. The structural analysis results showed that CH3NH3PbBr3 crystals grown on the prepared distributed Bragg reflector and reference substrates have the same structure, with a good crystal quality. The photoluminescence intensity of CH3NH3PbBr3 crystals grown on the distributed Bragg reflector was significantly enhanced. The enhancement is approximately 3.11-fold compared with CH3NH3PbBr3 crystals grown on the unetched reference GaN substrate. Moreover, there is a 7.2 nm spectral blue shift. The enhancement of the photoluminescence intensity could be attributed to the out-coupling of emission light in the prepared crystals, and the blue shift could be attributed to the stress relaxation caused by the nanoporous GaN structure of the distributed Bragg reflector substrate.

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Section: Resultsmentioning

confidence: 99%

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

et al. 2023

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Strategies for fourfold enhancement of narrowband green AC-driven electroluminescence from zinc gallate co-doped with Ce3+ and Mn2+ ions by field-enhanced energy transfer

Afandi

Kim

2023

Journal of Alloys and Compounds

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Wavelength Modulation and Fast Response of Mixed-Phase β-Ga₂O₃:Zn/SnO₂ in-Plane Heterojunction Ultraviolet Photodetectors

Li,

Deng,

et al. 2024

ACS Appl. Mater. Interfaces

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Ultraviolet photodetectors based on wide bandgap mixed-phase β-Ga 2 O 3 :Zn/SnO 2 thin films formed through doping on the c-sapphire substrate (c-Al 2 O 3 ) are prepared to construct in-plane heterojunctions employing a low-cost and simple preparation method. The mixed-phase thin film photodetectors have a low dark current of 0.74 nA, and the photo-to-dark current ratio ranges from 36.43 to 642.38 at 10 V. The photodetectors also have wavelength modulation, with response peaks ranging from 260 nm (4 mA/W) to 295 nm (1.63 A/W). Furthermore, the photodetectors have a fast response time with a rise time of 0.07 s/0.22 s and a decay time of 0.04 s/0.22 s at 1 V. The excellent performance of the devices is attributed to the reduction of V O and the establishment of multiple electric fields in the mixed-phase films, which indicates the feasibility of implementing wavelength-modulated and fast-response β-Ga 2 O 3 photodetectors using the sol−gel method.

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Effect of thermal annealing on the structural and optical properties of ZnGa2O4 films deposited on sapphire by magnetron sputtering

Cited by 3 publications

References 33 publications

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

Strategies for fourfold enhancement of narrowband green AC-driven electroluminescence from zinc gallate co-doped with Ce3+ and Mn2+ ions by field-enhanced energy transfer

Wavelength Modulation and Fast Response of Mixed-Phase β-Ga₂O₃:Zn/SnO₂ in-Plane Heterojunction Ultraviolet Photodetectors

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Effect of thermal annealing on the structural and optical properties of ZnGa2O4 films deposited on sapphire by magnetron sputtering

Cited by 3 publications

References 33 publications

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals

Strategies for fourfold enhancement of narrowband green AC-driven electroluminescence from zinc gallate co-doped with Ce3+ and Mn2+ ions by field-enhanced energy transfer

Wavelength Modulation and Fast Response of Mixed-Phase β-Ga2O3:Zn/SnO2 in-Plane Heterojunction Ultraviolet Photodetectors

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Wavelength Modulation and Fast Response of Mixed-Phase β-Ga₂O₃:Zn/SnO₂ in-Plane Heterojunction Ultraviolet Photodetectors