Radio Frequency Identification (RFID) becomes a prevalent labeling and localizing technique in the recent years. Deploying indoor RFID localization systems facilitates many applications. Previous approaches, however, are most based on 2D design and cannot provide 3D location information. The lack of one-dimensional information may lead 2D-based systems to inaccurate localization. In this paper, we develop an indoor 3D RFID localization system based on active tag array. In particular, we employ the geometric mean to filter the explicit 3D location information with high accuracy. The experimental results show that our system is efficient in tracking objects and improving the localization accuracy.
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in situ two‐step “oxidation–reconfiguration” process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic–thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN‐derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN‐based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion.
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