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Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecularbeam epitaxy J. Appl. Phys. 108, 093518 (2010); 10.1063/1.3498800Homoepitaxy of ZnO on bulk and thin film substrates by low temperature metal organic chemical vapor deposition using tert-butanol J.( 20 − 23 ) ZnO thin films grown by pulsed laser deposition on Ce O 2 -buffered r -sapphire substrate High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layerThe effects of a low-temperature ZnTe buffer layer on the structural, optical properties and surface morphology of ZnTe epilayers grown on ͑0001͒ sapphire substrates by metalorganic vapor phase epitaxy are investigated. X-ray diffraction, x-ray rocking curves, photoluminescence spectra, Raman spectra, and atomic force microscopy analysis reveal that the crystal quality, optical properties, and surface roughness of ZnTe epilayers can be improved by introducing a low-temperature ZnTe buffer layer between ZnTe epilayer and sapphire substrate, and that the thickness of the low-temperature ZnTe buffer layer is critical for obtaining a high quality ZnTe epilayer.

InGaN films were grown on (0001) sapphire substrates by reactive sputtering in nitrogen plasma, using a GaAs wafer and a pure indium target. It was found that In, Ga, As, and N atoms adsorb on the substrate and react with each other to form an InGaNAs film at a low substrate temperature. With increasing the substrate temperature to 550 °C, the arsenic atoms in the grown layer are completely desorbed, forming the InGaN film. X-ray diffraction analysis showed that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the InGaN films decreases linearly with an increase in Ga composition, obeying Vegard's law. Optical analysis revealed that the InGaN films have a direct band gap structure as InN and GaN and the band gap energy of the InGaN films can be tailored by varying the area ratio of the GaAs wafer to the indium target.

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