InGaN films were grown on (0001) sapphire substrates by reactive sputtering in nitrogen plasma, using a GaAs wafer and a pure indium target. It was found that In, Ga, As, and N atoms adsorb on the substrate and react with each other to form an InGaNAs film at a low substrate temperature. With increasing the substrate temperature to 550 °C, the arsenic atoms in the grown layer are completely desorbed, forming the InGaN film. X-ray diffraction analysis showed that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the InGaN films decreases linearly with an increase in Ga composition, obeying Vegard's law. Optical analysis revealed that the InGaN films have a direct band gap structure as InN and GaN and the band gap energy of the InGaN films can be tailored by varying the area ratio of the GaAs wafer to the indium target.
Abstract.A stress-luminescent powder can be applied as sensors because of luminous characteristic under stress. Key point in fabrication is how uniformly to disperse powders in metallic matrix. Three-dimensional penetration casting (3DPC) process is a good application to fabricate the composite materials using stress-luminescent powders and molten Al. A commercial stress-luminescent powder was prepared (a)stress-luminescent powders (Taikourozai Co.) and (b)EZ bright (EZ bright Cooperation). 3DPC process was conducted using a special mould has dimensions of 42mm height and 30mm diameter. Mould was heated up to 750℃ before 3DPC. After 3DPC, particles were well dispersed in Al matrix without crack generations with optical microscopy observation. Also, samples were emitted when they were pressed and scratched.
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