Low-temperature buffer layer effects on the quality of ZnTe epilayers grown on sapphire substrates

Abstract

Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecularbeam epitaxy J. Appl. Phys. 108, 093518 (2010); 10.1063/1.3498800Homoepitaxy of ZnO on bulk and thin film substrates by low temperature metal organic chemical vapor deposition using tert-butanol J.( 20 − 23 ) ZnO thin films grown by pulsed laser deposition on Ce O 2 -buffered r -sapphire substrate High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layerThe effects of a low-temperature ZnTe buffer layer on the structural, optical properties and surface morphology of ZnTe epilayers grown on ͑0001͒ sapphire substrates by metalorganic vapor phase epitaxy are investigated. X-ray diffraction, x-ray rocking curves, photoluminescence spectra, Raman spectra, and atomic force microscopy analysis reveal that the crystal quality, optical properties, and surface roughness of ZnTe epilayers can be improved by introducing a low-temperature ZnTe buffer layer between ZnTe epilayer and sapphire substrate, and that the thickness of the low-temperature ZnTe buffer layer is critical for obtaining a high quality ZnTe epilayer.

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

“…The Raman spectra were recorded in the back-scattering geometry of the z (x, -) z configuration 17 by using a Horiba Jobin Yvon LabRAM HR 800 system equipped with an Andor DU420 classic charge-coupled device detector. The 488 nm line of Ar laser was used to excite the samples.…”

(211) oriented ZnTe growth on m‐plane sapphire by MBE

“…1 Introduction II-VI compound semiconductors have attracted much attention for use in various practical devices, including solar cells [1,2], light emitting diode [3,4], UV sensors [5][6][7], electro-optic (EO) devices [8][9][10] and terahertz device applications [11][12][13]. In particular, zinc telluride has a superior permeability and a comparatively high EO effect [14][15][16][17][18] is expected.…”

“…In particular, zinc telluride has a superior permeability and a comparatively high EO effect [14][15][16][17][18] is expected. In recent years, a terahertz wave detection technology using the EO effect of ZnTe has been widely explored [11][12][13]. Single-crystalline ZnTe thin films are expected to yield even higher performance.…”

ZnTe layers on R ‐ and S ‐plane sapphire substrates

“…1 Introduction II-VI compound semiconductors have been widely applied to optoelectronic devices such as solar cells [1,2], X-ray high energy sensors [3,4], waveguides [5][6][7], and terahertz wave devices [8][9][10]. In particular, zinc telluride (ZnTe) has a superior permeability and a comparatively high electro-optic (EO) effect is expected.…”

“…In particular, zinc telluride (ZnTe) has a superior permeability and a comparatively high electro-optic (EO) effect is expected. Terahertz wave detection devices using the EO effect of ZnTe have been widely explored in recent years [8][9][10]. For applications to practical thin film-based terahertz wave detection devices, the layer thickness and the crystallographic orientation must be controlled [10,11].…”