The purpose of this system is to have the capability to characterize the performance of very high frequency transducers and arrays. The analog front end is computer controlled by a set of de-multiplexers and multiplexers. The output of the multiplexer network is connected to a TGC array, which is interfaced to a high-speed data acquisition system. A software GUI (Graphical User Interface) has been designed to accomplish this task [1]. A programmable digital I/O interface allows collection of RF channel data and has the capability to be interfaced to a very high frequency analog beamformer under construction. The system front-end electronics (pulsers, receivers, T/R switches, multiplexers, and demultiplexers) have been characterized [2,3]. The digital I/O signal interface has been integrated and tested. The hardware front end has been integrated to the array interface distribution panel. The individual transducer elements impulse responses have been evaluated and the performance of the array has been tested with a wire test phantom to characterize lateral and axial resolution.
Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure.In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by threedimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding.As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.
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