We report here on the genome sequence of Pasteurella multocida Razi 0002 of avian origin, isolated in Iran. The genome has a size of 2,289,036 bp, a GC content of 40.3%, and is predicted to contain 2,079 coding sequences.

The confocal detection principle is extended to a highly parallel optical system that continuously analyzes thousands of concurrent sample locations. This is achieved through the use of a holographic laser illumination multiplexer combined with a confocal pinhole array before a prism dispersive element used to provide spectroscopic information from each confocal volume. The system is demonstrated to detect and identify single fluorescent molecules from each of several thousand independent confocal volumes in real time.

Drastic changes in average molecularities (m=Cu/In) from m≫1 to m=0.92–0.93 and in hole concentrations from p≫1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions.

Photoluminescence studies as well as reflectance and transmittance measurements were performed on high-purity epitaxial InAs grown by metal-organic chemical-vapor deposition. We report the optical identification of excitonic, donor, and acceptor impurity related transitions at a temperature of 1.4 K. Measurements at higher temperature and in the presence of magnetic fields up to 7 T support these identifications. We find the excitonic band gap at 415.65±0.01 meV according to the minimum in the polariton reflectance feature. The donor–acceptor-pair and acceptor-bound exciton transitions for three different acceptors are observed by photoluminescence, and we tentatively associate one of them to a double acceptor formed by a Ga impurity on an As lattice site. A donor-bound exciton transition is observed with a binding energy of 0.42 meV. The magnetic field dependence yields values of the electron effective mass and g factor of (0.026±0.002)m0 and −15.3±0.2, respectively, in good agreement with values obtained by other techniques. Furthermore, we report a deep luminescence band of unknown origin at ∼375 meV, related to drastic temporal changes in the band-edge photoluminescence intensity.

We report chemical vapor deposition growth of SiGeC layers on ͗100͘ Si substrates. At the growth temperature of 550°C, the C concentration as high as 2% can be incorporated into SiGe ͑Ge content ϳ 25%͒ to form single crystalline random alloys by using low flow of methylsilane ͑0.25 sccm͒ as a C precursor added in a dichlorosilane and germane mixture. For intermediate methylsilane flow ͑0.5 sccm-1.5 sccm͒, the Fourier transform infrared spectroscopy ͑FTIR͒ absorption spectra indicate the growth of amorphous layers. For the layers with high flow of methylsilane ͑12 sccm͒, there are silicon-carbide-like peaks in the FTIR spectra, indicating silicon carbide precipitation. The films were also characterized by x-ray diffraction, high resolution transmission electron microscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy to confirm crystallinity and constituent fractions. The defect-free band-edge photoluminescence at both 30 K and 77 K was observed in Si/SiGeC/Si quantum wells, even at power densities as low as 0.5 W/ cm 2 and 1 W/cm 2 , respectively. Deep photoluminescence around 0.8 eV and luminescence due to D 3 dislocations at 0.94 eV were not observed under any excitation conditions.