The current status and future perspectives of Cu(In 1Àx Ga x )Se 2 (CIGS) solar cells and modules will be discussed in this paper. The conversion efficiencies of the state of the art laboratory-scale CIGS solar cells exceeded 20%, which are comparable to those of crystalline Si solar cells. The requirements on the properties of CIGS absorbers to achieve such high efficiencies will be described. The CIGS modules are already commercially available based on two major CIGS deposition techniques such as co-evaporation and selenization. The current status, problems, and prospects of co-evaporation and selenization will also be discussed. High-efficiency flexible CIGS solar cells with efficiencies similar to those fabricated on soda-lime glass (SLG) substrates have been achieved by developing a novel Na incorporation technique. Critical issues to demonstrate high-efficiency flexible solar cells will also be discussed.

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We demonstrate the improved efficiency of a Cu2Zn(Sn1− x Ge x )Se4 (CZTGSe) thin-film solar cell with a conversion efficiency of 12.3%; this cell exhibits a greatly improved open-circuit voltage (V OC) deficit of 0.583 V and a fill factor (FF) of 0.73 compared with previously reported CZTGSe cells. The V OC deficit was found to be improved through a reduced band tailing via the control of the Ge/(Sn + Se) ratio. In addition, the high FF was mainly induced by a reduced carrier recombination at the absorber/buffer interface and/or in the space charge region, whereas parasitic resistive effects on FF were very small.

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]‖[112̄0] and 〈112̄0〉‖[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to >0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire.

The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu͑In, Ga͒Se 2 ͑CIGS͒ thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknesses deposited on substrates prior to CIGS growth. The CIGS grain size was observed to decrease with increasing Na concentration, although the surface morphology became smoother and exhibited a stronger ͑112͒ texture, which has been demonstrated consequence of larger grain size. The Ga composition gradient in the CIGS films was found to become large due to the presence of Na during growth, which in turn led to a decrease in the nominal band gap energy. Variations in the photoluminescence spectra and electrical properties suggested that the formation of an acceptor energy state, which may originate from O Se point defects, was enhanced in the presence of Na. This result suggests that not only Na, but also the presence of O in combination with Na contributes to the compensation of point defects and enhances p-type conductivity in CIGS films.

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