High purity chemical vapor deposition (CVD) silicon carbide fabricated by a commercial process was examined and oxidized at 1100~ along with high purity single crystal silicon carbide. The freestanding CVD thick films had a highly textured polycrystalline microstructure, with the <111 > directions of the crys_tals_parallel to the growth direction. This texturing maintained the polarity_of the 43m crystal structure, implying that either the [111 ] or the [1 ! 1] direction grew significantly faster during the CVD process. The (1 1 1 ) face of the cubic, CVD-SiC oxidized at the same rate as the (0001) face of the single crystal SiC. The (111 ) face of the CVD-SiC oxidized at nominally the same rate as the (0001) face of the single crystal SiC.
We have prepared an 8-inch wafer by the hybridization of 1.6-inch single crystalline 6H-SiC core and surrounding polycrystalline 3C-SiC. The hybrid wafer was fabricated by depositing the 3C-SiC around the 6H-SiC. Boundary between the 6H-SiC and the 3C-SiC was very smooth and tightly bonded. The polycrystalline 3C-SiC thus obtained has very high purity for semiconductor fields.
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