Applications of High Purity SiC Prepared by Chemical Vapor Deposition

Deposition of cubic silicon carbide thin films via thermal decomposition of methyltrichlorosilane in hydrogen

“…Thin SiC layers are commonly prepared by various plasma deposition processes, e.g., in the SiH 4 -CH 4 -H 2 [1,2] or SiH 4 -CH 4 -H 2 -PH 3 [1,3] system (emitter layers in bipolar transistors), and by electron-beam evaporation [4] (diode fabrication). High-purity polycrystalline SiC layers deposited via methyltrichlorosilane (MTCS) decomposition in hydrogen between 1250 and 1350 ° C find application in microelectronics (substrate holders, boats) and as loudspeaker diaphragms [5]. Using microcrystalline p -type SiC films grown by a magnetron method, Nishikuni et al [6] were able to produce high-efficiency solar cells.…”

“…Our aim was to prepare high-purity polycrystalline silicon carbide layers suitable for electronic applications [1][2][3][4][5][6][7][8]. The deposition temperature was 900-1250 ° C, the range in which polycrystalline SiC is formed [15].…”