m e temperature dependence of the luminescence of lhe ZnTe:O isoelectronic hap is presented for different excitation energies and is interpreted within a simple modeL Interactions that are responsible for the temperature dependence of the lifetime at different excimtion energies are discussed.
From general considerations optical gain for the isoelectronic trap ZnTe : 0 emission spectra is expected for excitations within and above the oxygen absorption spectrum. This gain has been observed with the method of Shaklee at 2 K in ZnTe:O monocrystals grown by sublimation at temperatures of about 1100 "C. We report gain spectra for band-to-band excitation (2.84 eV) and some observations on the gain values for oxygen resonant excitation (2.14 eV).
Excitation spectra of the iodine bound exciton in AgBr are performed and a new interpretation is given for the fine structure observed. The high-energy range of the excitation spectra is compared and discussed with other impurity spectra.
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