Fluorescent decay times of excitons bound to oxygen traps in ZnTe : O

Burki, Y.; Czaja, W.; Capozzi, V.; Schwendimann, P.

doi:10.1016/0022-2313(94)90080-9

Cited by 4 publications

(1 citation statement)

References 8 publications

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“…The first one is the one usually referred as the Y band which has been related by many authors to structural defects in epitaxial layers [18,19]. On the other hand, red emissions, in the range 1.77-1.98 eV, have been reported and attributed to oxygen centres O T e [12] and Zn-O axial centres [20,21]. The fact that both emissions (2.15 eV and 1.88 eV) are excited with the same energy suggests that these levels could be related.…”

Section: Resultsmentioning

confidence: 99%

Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

Fernández

Garcı́a

Remón

et al. 1998

Semicond. Sci. Technol.

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ZnTe single crystals grown by the cold travelling heater method have been investigated by means of photo-and cathodoluminescence. The spectral region covered in this work ranges from 2.48 eV (500 nm) which corresponds to band-edge emission to 0.62 eV (2000 nm). Visible and infrared cathodoluminescence images have been recorded, and the influence of extended defects on the observed luminescence has been studied.

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Section: Resultsmentioning

confidence: 99%

Cathodoluminescence microscopy and photoluminescence of defects in ZnTe

Fernández

Garcı́a

Remón

et al. 1998

Semicond. Sci. Technol.

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Growth by Vapor‐Solid Method and Luminescence Characterization of Zn‐Chalcogenides Micro‐ and Nanostructures

Sotillo

Urbieta

Fernández

2018

Physica Status Solidi (a)

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In this work, ZnSe and ZnTe micro‐ and nanostructures are grown by the vapor‐solid method. Thermal treatments are performed in an inert atmosphere (Ar) to avoid the oxidation of the samples, at 900 °C for 24 h. The structures obtained are investigated by SEM and HRTEM to assess morphology and microstructure. The optical properties are investigated by cathodoluminenscence technique. The bandgaps of these compounds are 2.8 eV for ZnSe and 2.4 eV for ZnTe, however, the luminescence study is extended toward red and near infrared regions to investigate the defect levels. The influence of the size and morphology of the structures on the luminescence properties are studied.

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