Optical Gain in ZnTe: O at 2 K

Abstract

From general considerations optical gain for the isoelectronic trap ZnTe : 0 emission spectra is expected for excitations within and above the oxygen absorption spectrum. This gain has been observed with the method of Shaklee at 2 K in ZnTe:O monocrystals grown by sublimation at temperatures of about 1100 "C. We report gain spectra for band-to-band excitation (2.84 eV) and some observations on the gain values for oxygen resonant excitation (2.14 eV).

Identification of a new series of benzothiazinone derivatives with excellent antitubercular activity and improved pharmacokinetic profiles

“…It provides us a new direction for lead optimization as this very promising scaffold. Screening of these compounds based on PK prole led to the identication of a potent hit compound 3o, 2-(4-(5-uoropyrimidin-2-yl)piperidin-1-yl)-6-nitro-8-(triuoromethyl)-4H-benzo [e] [1,3]thia-zin-4-one. This compound maintained the good anti-M.tb activity in vitro (MIC ¼ 8 nM) and good metabolic stability in SD rats.…”

“…2 While, the latest data reported by WHO showed the treatment success rate for MDR-TB is 54%, reecting high rates of treatment failure. 3 Nitrobenzothiazinone (BTZ), represented by BTZ043 ( Fig. 1a) and PBTZ169 (Fig.…”

“…This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. 24 (71.05% yield) 1 H NMR (400 MHz, CDCl 3 , Me 4 Si) d 4.46 (dd, J ¼ 11.4, 3.6 Hz, 1H), 3.54 (s, 2H), 3.27-3.18 (m, 2H), 3.10-3.00 (m, 2H), 1.79 (s, 2H), 1.76-1.29 (m, 8H).4.1.1.2 General procedure for the synthesis of compound tertbutyl 4-(8-nitro-4-oxo-6-(triuoromethyl)-4H-benzo[e][1,3]thiazin-2-yl)piperazine-1-carboxylate. To 3 g of 2-chloro-3-nitro-5-(triuoromethyl)benzoic acid in dichloromethane 2.64 mL of oxalyl chloride and 0.05 mL DMF were added.…”

“…4.1.1.6 2-(4-Cyclopentyl-3-oxopiperazin-1-yl)-8-nitro-6(triuoromethyl)-4H-benzo[e]-[1,3]thiazin-4-one (1a). Method 4.1.2 starting from 1 (54% yield, yellow powder) 1.…”

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

“…For example, it could increase the efficiency of solar cell devices ( > 60%) [25], Some materials have attracted attention in the insertion of intermediate states using different host-impurity combinations: some transition-metal doped chalcopyrites [26][27][28][29], II-VI semiconductors doped with isoelectronic oxygen impurities, and Cr-doped zinc chalogenides [30,31]. The isoelectronic doping of II-VI compounds with oxygen has shown that oxygen gives rise to deep traps [32][33][34][35] at which carriers recombine radiatively [36][37][38][39][40]. Cr-doped zinc chalogenides [41][42][43] have been used as broadly tunable continuous wave lasers.…”