The interface electronic structures of copper phthalocyanine (CuPc) have been studied using ultraviolet photoemission spectroscopy as different monolayers of C60 were inserted between CuPc and a SiO2 or highly ordered pyrolytic graphite (HOPG) substrate. The results show that CuPc has standing up configuration with one monolayer of C60 insertion on SiO2 while lying down on HOPG, indicating that the insertion layer propagates the CuPc-substrate interaction. Meanwhile, CuPc on more than one monolayers of C60 on different substrates show that the substrate orientation effect quickly vanished. Our study elucidates intriguing molecular interactions that manipulate molecular orientation and donor-acceptor energy level alignment.
Nitrogen and oxygen enriched FZ silicon p‐in‐n pad radiation detectors are investigated with respect to the radiation hardness. The leakage current and the charge carrier lifetime are measured before and after 1 MeV electron irradiation. Before irradiation the leakage current was found to increase due to enrichment by nitrogen and oxygen. After the irradiation the leakage current as well as the radiation induced defect density are found to be reduced in the nitrogen and oxygen enriched samples. Hence, increased radiation hardness for the enriched FZ silicon is observed. The defect reduction efficiency of nitrogen was found to be about two orders of magnitude higher than that of oxygen.
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