The authors report on the fabrication of low-driven-voltage and high mobility ZnO thin-film transistor with sputtering Ta2O5 film as the dielectric. The device shows a field effect mobility of 60.4 cm2/V s, a threshold voltage of 1.1 V, an on/off ratio of 1.22×107, and a subthreshold swing of 0.23 V/decade. The high mobility partially resulted from the fringing-electric-field effect due to the undefined active layer. Therefore, considering our device geometry, the actual mobility is about 40.5 cm2/V s. We contribute the high performance to the proper dielectric thickness, smooth insulator surface, and relatively low trap state densities in the insulator/channel interface.

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The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

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