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Twist-controlled bilayer graphene (tBLG) and double-twisted trilayer graphene (DTTG) with high precision are fabricated and their controllable optoelectronic properties are investigated for the first time. The successful fabrication of tBLG and DTTG with designated θ provides an attractive starting point for systematic studies of interlayer coupling in misoriented few-layer graphene systems with well-defined geometry.

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Based on the polarization-sensitive absorption of graphene under conditions of total internal reflection, a novel optical sensor combining graphene and a microfluidic structure was constructed to achieve the sensitive real-time monitoring of refractive indexes. The atomic thickness and strong broadband absorption of graphene cause it to exhibit very different reflectivity for transverse electric and transverse magnetic modes in the context of a total internal reflection structure, which is sensitive to the media in contact with the graphene. A graphene refractive index sensor can quickly and sensitively monitor changes in the local refractive index with a fast response time and broad dynamic range. These results indicate that graphene, used in a simple and efficient total internal reflection structure and combined with microfluidic techniques, is an ideal material for fabricating refractive index sensors and biosensor devices, which are in high demand.

A giant Goos-Hänchen (G-H) shift in graphene has been theoretically predicted by previous research. In this Letter, we present experimental measurements of the G-H shift in graphene, in a total internal reflection condition, using a new method we have named "the beam splitter scanning method." Our results show that a focused light source undergoes significant lateral shift when the polarization of incident light changes from transverse magnetic (TM) to transverse electric (TE) mode, indicating a large G-H shift in graphene that is polarization-dependent. We also observed that the difference in the G-H shift for TM versus TE modes (S(TM)-S(TE)) increases with increasing thickness of graphene material. A maximum difference (S(TM)-S(TE)) of 31.16 μm was observed, which is a significant result. Based on this research, the ability to engineer giant G-H shifts in graphene material has now been experimentally confirmed for the first time to the best of our knowledge. We expect that this result will lead to significant new and interesting applications of graphene in various types of optical sensors, and more.