In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage. Prior to the electroforming, the analog bipolar resistive switching was realized through the change of the Schottky barrier at p-type NiO/Ag junction by the local migration of the oxygen ion in the interface. On the basis of the analog resistive switching, several synaptic functions were demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity, long-term/short-term memory, and "learning-experience" behavior. In addition, once the electroforming operation was carried out using a high applied voltage, the resistive switching was changed from analog to digital. The formation and rupture of the oxygen vacancy filaments is dominant. This novel memristor with the multifunction of analog and digital resistive switching is expected to decrease the manufacturing complexity of the electrocircuits containing analog/digital memristors.
In this research, solution-processed NiO-based memristors have been demonstrated with three resistive switching modes, including analog resistive switching, volatile threshold resistive switching and nonvolatile digital resistive switching, where the specific behavior is determined by the applied bias voltage and compliance current. The analog resistive switching is achieved via local oxygen ion migration at the NiO/Ag interface under low voltage stress. Based on this resistive switching mode, several synaptic functions are mimicked. When the device is stressed using a high voltage and a low compliance current, the device behavior changes to volatile threshold resistive switching. This behavior allows spiking neuron functions to be simulated. Furthermore, under application of a high compliance current, the device behavior converts to nonvolatile digital resistive switching. Ag filament formation and rupture processes are considered to be the mechanism behind the volatile threshold and nonvolatile resistive switching behavior. This multifunctional NiO-based memristor will provide a basis for fabrication of memory devices, analog circuits and artificial neural networks.
In this study, a nickel oxide (NiO)-based resistive random-access memory (RRAM) was demonstrated with multistate data storage. The NiO thin film was fabricated by solution procession combined with UV irradiation at a low temperature of 200 °C. The device exhibited a high on/off resistance ratio (>10 5 ), as well as good endurance and excellent retention characteristics. It is important that multistate data storage was obtained by adjusting the RESET stop voltage, which resulted in a multilevel cell (MLC) to increase storage density. Unintentionally doped carbon (C) was distributed in the NiO thin film with periodic fluctuation. C-related filaments formation and multistate rupture were suggested as the resistive switching mechanism.
Nickel hydroxide [Ni(OH) 2 ] thin films were synthesized by a solution process and characterized by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and time-of-flight secondary-ion mass spectrometry. Unlike nickel oxide (NiO) memristors, which exhibit only nonvolatile memory properties, the Ag/Ni(OH) 2 /Pt memristor can be operated in volatilethreshold resistive-switching mode with the compliance current (I cc ) varying from 10 nAto 100 μA. When I cc exceeds 1 mA, the nonvolatile switching mode is triggered. The resistiveswitching mechanism of Ag ion diffusion in Ni(OH) 2 is discussed by combining experimental analysis and density functional theory calculations. The results provide a useful guideline for designing volatile-threshold memristor.
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