Multistate data storage in solution-processed NiO-based resistive switching memory

Chu, Jinxing; Li, Ya; Fan, Xihua; Shao, Huihong; Duan, Weijie; Pei, Yanli

doi:10.1088/1361-6641/aae06c

Cited by 15 publications

(22 citation statements)

References 27 publications

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“…[35,41] Several studies using these active electrodes have been reported in solution-based metal oxide RRAMs. [68,123,226,312] Cho and co-workers studied the resistive switching behavior on solution-based niobium pentoxide (Nb 2 O 5 ) thin films. [68] The resultant Pt/Nb 2 O /Ag devices presented a unipolar switching, low operating voltage, fast switching speed (100 ns) and ultrahigh resistance window, ≥10 8 .…”

Section: Influence Of the Electrodes/metal Oxide Interfacementioning

confidence: 99%

“…[ 226 ] Pei and co‐workers reported a multistate data storage in ECM cells with solution‐based NiO thin films as the resistive switching layer and Ag as the active electrode. [ 312 ] These devices showed a high resistance ratio (10 5 ) and retention characteristics for the different level states. Lately, Mohammad and co‐workers produced solution‐based HfO 2 thin films and then incorporated in p ++ ‐Si/HfO 2 /Cu resistive switching devices.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Section: Influence Of the Electrodes/metal Oxide Interfacementioning

confidence: 99%

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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“…UV‐irradiation alone has also gained attention as a means to reduce the post‐annealing temperature for sol–gel spin‐coated oxide films. Illuminating a film immediately after spin coating with deep UV light (eg, 253.7 nm wavelength) can cleave alkoxyl groups, remove C and initiate condensation reactions for the formation of M‐O‐M bonds, resulting in densification 115,152 . As a result, the post‐annealing temperature required can be significantly reduced from 300°C to 200°C.…”

Section: Post‐deposition Processingmentioning

confidence: 99%

“…Such an approach would be important for oxides grown by solution processing on polymeric substrates, since the required annealing temperature is significantly reduced. UV irradiation has been used to improve the properties of NiO x for tailored applications, such as electrochromics 153 and resistive switching random access memory devices 152 . Another approach to anneal solution‐processed oxides at low temperature is flash lamp annealing.…”

Section: Post‐deposition Processingmentioning

confidence: 99%

“…The switching of NiO x is typically considered to be unipolar, that is, the same voltage polarity is used for both SET and RESET, 98,181 with the switching characteristics being independent of the electrode size in submicron devices, 185 but bipolar switching has also been demonstrated 73,152 . The type of switching has been shown to be dependent on the electrode materials used.…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

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Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Napari

Huq

Hoye

et al. 2020

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Nickel oxide (NiOx), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching random access memory devices and highly sensitive and selective sensor applications. In addition, the wide band gap and high work function, coupled with the low electron affinity, have made NiOx widely used in emerging optoelectronics and p‐n heterojunctions. The properties of NiOx thin films depend strongly on the deposition method and conditions. Efficient implementation of NiOx in next‐generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material, but which are also compatible with flexible substrates. In this review, we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films, and with its application in electronic devices. We focus solely on thin films, rather than NiOx incorporated with one‐dimensional or two‐dimensional materials. This review starts by discussing how the p‐type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic properties. We discuss the chemical deposition techniques for growing NiOx thin films, including chemical vapor deposition, atomic layer deposition, and a selection of solution processing approaches, and present examples of recent progress made in the implementation of NiOx thin films in devices, both on rigid and flexible substrates. Furthermore, we discuss the remaining challenges and limitations in the deposition of device‐quality NiOx thin films with chemical growth methods.

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