Ni(OH)₂ based dual-mode memristor

Abstract

Nickel hydroxide [Ni(OH) 2 ] thin films were synthesized by a solution process and characterized by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and time-of-flight secondary-ion mass spectrometry. Unlike nickel oxide (NiO) memristors, which exhibit only nonvolatile memory properties, the Ag/Ni(OH) 2 /Pt memristor can be operated in volatilethreshold resistive-switching mode with the compliance current (I cc ) varying from 10 nAto 100 μA. When I cc exceeds 1 mA, the nonvolatile switching mode is triggered. The resistiveswitching mechanism of Ag ion diffusion in Ni(OH) 2 is discussed by combining experimental analysis and density functional theory calculations. The results provide a useful guideline for designing volatile-threshold memristor.

Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure

“…For threshold switching, the key point is the rapid diffusion of Ag ion in Ni(OH) 2 matrix. This has been reported in our previous work [17]. In addition, V th increases with the increase in the test temperature.…”

“…In our previous work, we reported unidirectional threshold resistive switching in Ag/Ni(OH) 2 /Pt structure. In that work [17], when positive bias was applied to the Ag top electrode, the device changed to the ON state, and after removing the bias, the device returned to its initial state. In contrast, in this work, it is interesting to note that the volatile-threshold resistive switching is bi-directional.…”

“…Therefore, the key to reducing the threshold switching voltage is to find a host material for Ag or Cu rapid diffusion. In our previous work [17], Ag/Ni(OH) 2 /Pt memristors were investigated. Unidirectional threshold switching is realized with threshold switching voltage as low as 0.2 V. This is attributed to the relatively fast diffusion of Ag ions in Ni(OH) 2 matrix.…”