As one of the most important two-dimensional (2D) materials, BN nanosheets attracted intensive interest in the past decade. Although there are many methods suitable for the preparation of BN sheets, finding a cheap and nontoxic way for their mass and high-quality production is still a challenge. Here we provide a highly effective and cheap way to synthesize gram-scale-level well-structured BN nanosheets from many common graphite products as source materials. Single-crystalline multi-layered BN sheets have a mean lateral size of several hundred nanometers and a thickness ranging from 5 nm to 40 nm. Cathodoluminescence (CL) analysis shows that the structures exhibit a near band-edge emission and a broad emission band from 300 nm to 500 nm. Utilization of nanosheets for the reinforcement of polymers revealed that the Young's modulus of BN/PMMA composite had increased to 1.56 GPa when the BN's fraction was only 2 wt.%, thus demonstrating a 20% gain compared to a blank PMMA film. It suggests that the BN nanosheet is an ideal mechanical reinforcing material for polymers. In addition, this easy and nontoxic substitution method may provide a universal route towards high yields of other 2D materials.

Boron nanowires (BNWs) may have potential applications as reinforcing materials because B fibers are widely known for their excellent mechanical performance. However until now, there have been only few reports on the mechanical properties of individual BNW, and in situ transmission electron microscopy (TEM) investigations shining a light on their fracture mechanism have not been performed. In this paper, we applied in situ high-resolution TEM (HRTEM) technique to study the mechanical properties of individual BNWs using three loading schemes. The mean fracture strength and the maximum strain of individual BNWs were measured to be 10.4 GPa and 4.1%, respectively, during the tensile tests. And the averaged Young's modulus was calculated to be 308.2 GPa under tensile and compression tests. Bending experiments for the first time performed on individual BNWs revealed that their maximum bending strain could reach 9.9% and their ultimate bending stress arrived at 36.2 GPa. These figures are much higher than those of Si and ZnO nanowires known for their high bending strength. Moreover, the BNWs exhibited very high specific fracture strength (3.9 (GPa·cm(3))/g) and specific elastic modulus (130.6 (GPa·cm(3))/g), which are several dozens of times larger compared to many nanostructures known for their superb mechanical behaviors. At last, the effect of surface oxide layer on the Young's modulus, fracture strength and maximum bending strength of individual BNWs was elucidated to extract their intrinsic mechanical parameters using calculated corrections. All experimental results suggest that the present BNW are a bright promise as lightweight reinforcing fillers.

Boron nanowires (BNWs) are considered as an ideal optoelectronic nanomaterial, but controlling them in identical growth mode and large-area patterns is technically challenging. Here, large-scale BNW patterns with a uniform base-up growth mode are successfully fabricated by choosing Ni film as the catalyst. Moreover, they exhibit low turn-on field (4.3 V/μm) and excellent field emission uniformity (88%).

Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future.

No abstract