Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

Fei, Liu; Li, Lifang; Guo, Tongyi; Gan, Haibo; Mo, Xiaoshu; Chen, Jun; Deng, Shaozhi; Xu, Ning

doi:10.1186/1556-276x-7-454

Cited by 27 publications

(15 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The GaNNW device also exhibits positive photoelectric response. The positive photoelectric response of both SiC and GaN nanowires can be attributed to the molecular sensitization model, which was also reported for some other nanostructured material systems (Soci et al , 2007; Liu et al , 2012; Huang and Zhang, 2011; Mathur et al , 2005).…”

Section: Resultssupporting

confidence: 75%

UV-induced photosensing characteristics of SiC and GaN nanowires

Teker

Ali

Uzun

2019

View full text Add to dashboard Cite

Purpose This study aims to investigate photosensing characteristics of SiC and GaN nanowire-based devices through exposure to UV light. The photocurrent transients have been modeled to determine rise and decay process time constants. The 1D-semiconductor nanowires can exhibit higher light sensitivity compared to bulk materials because of their large surface area to volume ratio and the quantum size effects. Design/methodology/approach Nanowire devices have been fabricated through dielectrophoresis for integrating nanowires onto pre-patterned electrodes (10 nm Ti/ 90 nm Au) with a spacing about 3 µm onto SiO2/Si (doped) substrate. The photocurrent measurements were carried out under room temperature conditions with UV light of 254 nm wavelength. Findings SiCNWs yield very short rise and decay time constants of 1.3 and 2.35 s, respectively. This fast response indicates an enhanced surface recombination of photoexcited electron-hole pairs. Conversely, GaNNWs yield longer rise and decay time constants of 10.3 and 15.4 s, respectively. This persistent photocurrent suggests a reduced surface recombination process for the GaNNWs. Originality/value High selective UV light sensitivity, small size, very short response time, low power consumption and high efficiency are the most important features of nanowire-based devices for new and superior applications in photodetectors, photovoltaics, optical switches, image sensors and biological and chemical sensing.

show abstract

Section: Resultssupporting

confidence: 75%

UV-induced photosensing characteristics of SiC and GaN nanowires

Teker

Ali

Uzun

2019

View full text Add to dashboard Cite

show abstract

“…The adsorption of molecular gases results in the changes of the conductance induced by the change in carrier concentration Δn s . This is [ 308] AlN NWs 325 --2.7 × 10 6 -0.001 [ 309] GaN NWs 320-400 --1.74 × 10 7 6.08 × 10 9 0.144 [ 229] GaN NWs 325 10 −8 -2 . 2 × 10 4 3.2 × 10 7 <0.026 [ 227] GaN/AlN NWs 300 -5.2 × 10 −14 2 × 10 3 -- [ 232] GaN NWs/Pt 380 --6.39 × 10 4 2.24 × 10 7 1.1 [ 228] GaN NWs/graphene 357 1.28 × 10 −4 -2 5 -- [ 303] AlN/GaN/AlN NWs 325 10 −9 -10 −12 -200-700 -- [ 310] GaN/AlN NWs 280-330 0.5 × 10 −9 -3.4 × 10 −9 -3 .…”

Section: Gas and Humidity Sensorsmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

View full text Add to dashboard Cite

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III‐nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom‐up and top‐down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast‐emerging research field.

show abstract

“…Such non-linearity is probably due to the work-function difference between the NW and metal contacts [32] . under visible-light illumination, even when no external bias is applied [32] . The results from a sparse network of RD-GeNWs are shown in Figure 3.…”

Section: B Fabrication Of Dual-metal Test Benches On Oxidementioning

confidence: 99%

“…The zerobias photocurrents in these highly disordered NWs indicate the effectiveness of using metal electrodes with different work functions. Notably, a mere random dispersion of NWs on dissimilar metal pads can extract such a high and distinct photocurrents at room temperature under visiblelight illumination, even when no external bias is applied [32] . The results from a sparse network of RD-GeNWs are shown in Figure 3.…”

Section: Preparation Of Nanowire Suspension and Dispersionmentioning

confidence: 99%

Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires

Rabbani¹,

Patil²,

Verma³

et al. 2015

Nanotechnology

View full text Add to dashboard Cite

Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated using a standard CMOS fabrication process, and utilized metal contacts with dissimilar work functions-Al and Ni. The randomly dispersed NWs respond to light by exhibiting substantial photocurrents and, most remarkably, demonstrate zero-bias photo-switching. The magnitude of the photocurrent is dependent on the NW material, as well as the channel length. The photocurrent in randomly dispersed GeNWs was found to be higher by orders of magnitude compared to SiNWs. In both of these material systems, when the length of the NWs was comparable to the channel length, the currents in sparse NW networks were found to be higher than those in dense NW networks, which can be explained by considering various possible arrangements of NWs in these devices.

show abstract

Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

Cited by 27 publications

References 25 publications

UV-induced photosensing characteristics of SiC and GaN nanowires

UV-induced photosensing characteristics of SiC and GaN nanowires

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires

Contact Info

Product

Resources

About