2013
DOI: 10.1021/nn404316a
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Individual Boron Nanowire Has Ultra-High Specific Young’s Modulus and Fracture Strength As Revealed by in Situ Transmission Electron Microscopy

Abstract: Boron nanowires (BNWs) may have potential applications as reinforcing materials because B fibers are widely known for their excellent mechanical performance. However until now, there have been only few reports on the mechanical properties of individual BNW, and in situ transmission electron microscopy (TEM) investigations shining a light on their fracture mechanism have not been performed. In this paper, we applied in situ high-resolution TEM (HRTEM) technique to study the mechanical properties of individual B… Show more

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Cited by 34 publications
(28 citation statements)
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“…Boron nanomaterials arouse enormous interest from both scientific and technological angles of view because of its unique chemical and physical properties, which ensure its wide applications in high‐temperature devices, high‐energy fuel, nuclear engineering, coatings, and field emission (FE) 12. Intriguingly, boron has a band gap (≈1.5 eV),11,[[qv: 13d]] and the theoretical study predicted that it has also a high conductance (≈10 2 Ω −1 cm −1 ) and carrier mobility (≈10 2 cm 2 V −1 s −1 ),14 which guarantee it to be a perfect combination of ideal semiconductor properties for the applications in electronics and optoelectronics.…”
Section: Introductionmentioning
confidence: 99%
“…Boron nanomaterials arouse enormous interest from both scientific and technological angles of view because of its unique chemical and physical properties, which ensure its wide applications in high‐temperature devices, high‐energy fuel, nuclear engineering, coatings, and field emission (FE) 12. Intriguingly, boron has a band gap (≈1.5 eV),11,[[qv: 13d]] and the theoretical study predicted that it has also a high conductance (≈10 2 Ω −1 cm −1 ) and carrier mobility (≈10 2 cm 2 V −1 s −1 ),14 which guarantee it to be a perfect combination of ideal semiconductor properties for the applications in electronics and optoelectronics.…”
Section: Introductionmentioning
confidence: 99%
“…Using the state before parallel relaxation as reference, we express the total force per unit length in term of strain, Eq. (7) indicates that the first, second and third order force coefficients:…”
Section: Resultsmentioning
confidence: 99%
“…The observed highest value of fracture strength was 53.4 GPa, approaching the theoretical strength of the 10% of Young's modulus of the material. Using in situ high-resolution transmission electron microscopy (HRTEM), Liu et al [7] conducted tensile and bending tests on individual boron NWs. The tensile test results gave the mean fracture strength and the maximum strain of the individual boron NWs to be 10.4 GPa and 4.1%, respectively.…”
mentioning
confidence: 99%
“…As illustrated in Figure 1a, BNWs were uniformly grown on the substrate of CFC. [24][25][26] Moreover, the corresponding diffraction spots in the inset (acquired from the same nanowire) are very clear, indicating that the nanowire is a single crystalline BNWs. Typical TEM image confirms the structure of as-fabricated BNWs possess a diameter around 95 nm (Figure 1d).…”
Section: Characterization Of Bnws-cfcmentioning
confidence: 99%