The interest in the design and controllable fabrication of hollow carbon spheres (HCSs) emanates from their tremendous potential applications in adsorption, energy conversion and storage, and catalysis. However, the effective synthesis of uniform HCSs with high surface area and abundant micropores remains a challenge. In this work, HCSs with tunable microporous shells were rationally synthesized via the hard-template method using resorcinol (R) and formaldehyde (F) as a carbon precursor. HCSs with a very high surface area (1369 m/g) and abundant micropores (0.53 cm/g) can be obtained with the assistance of additional inorganic silanes (TEOS) simultaneously with the carbon source (RF). Interestingly, the extra-abundant micropores showed favorable adsorption for CO, resulting in a 1.5 times increase in the CO adsorption capacity compared to that of normal HCSs under the same conditions. Meanwhile, these HCSs hold potential for use in the separation of gases such as CO and N.

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III–V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III–V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.