CdZnTe bulk crystals were grown by temperature gradient solution growth (TGSG) method with the lower starting growth temperature of 1223K, temperature gradient of 20-30 K/cm and a crucible dropping rate varied from 1 to 0.6 mm/h. Optical microscope, IR microscope, I-V characteristics and FTIR transmission spectroscopy were employed to analyze the growth interfaces, Te inclusions, resistivity and IR transmittance respectively. The results indicate that a smooth and uniform growth interface has been achieved. The density of Te inclusions is about 7.9-9.5×103cm-2, while the resistivity is higher than 6.87×109Ωcm and the IR transmittance is about 55-60%.
Deep level transient spectroscopy (DLTS) and photo induced current transient spectroscopy (PICTS) are commonly used methods for the identification semiconductor impurities and defects. In this paper, a measurement system of DLTS and PICTS has been developed by LabVIEW. A series of different instruments construct this systems hardware (signal generator; current amplifier; capacitance meter; oscilloscope,etc.) while software is also easy to program by LabVIEW. This system demonstrates high generality for both DLTS and PICTS, and data acquired can be stored or read in computer. By contrast, it is much lower cost comparative to commercial DLTS or PICTS system. Testing result of silicon P+N junction coincides with semiconductor theory research.
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