Growth and Characterization of CdZnTe Bulk Crystals Grown by Temperature Gradient Solution Growth

Abstract

CdZnTe bulk crystals were grown by temperature gradient solution growth (TGSG) method with the lower starting growth temperature of 1223K, temperature gradient of 20-30 K/cm and a crucible dropping rate varied from 1 to 0.6 mm/h. Optical microscope, IR microscope, I-V characteristics and FTIR transmission spectroscopy were employed to analyze the growth interfaces, Te inclusions, resistivity and IR transmittance respectively. The results indicate that a smooth and uniform growth interface has been achieved. The density of Te inclusions is about 7.9-9.5×103cm-2, while the resistivity is higher than 6.87×109Ωcm and the IR transmittance is about 55-60%.