Low‐bandgap mixed tin–lead perovskite solar cells (PSCs) have been attracting increasing interest due to their appropriate bandgaps and promising application to build efficient all‐perovskite tandem cells, an effective way to break the Shockley–Queisser limit of single‐junction cells. Tin fluoride (SnF2) has been widely used as a basis along with various strategies to improve the optoelectronic properties of low‐bandgap SnPb perovskites and efficient cells. However, fully understanding the roles of SnF2 in both films and devices is still lacking and fundamentally desired. Here, the functions of SnF2 in both low‐bandgap (FASnI3)0.6(MAPbI3)0.4 perovskite films and efficient devices are unveiled. SnF2 regulates the growth mode of low‐bandgap SnPb perovskite films, leading to highly oriented topological growth and improved crystallinity. Meanwhile, SnF2 prevents the oxidation of Sn2+ to Sn4+ and reduces Sn vacancies, leading to reduced background hole density and defects, and improved carrier lifetime, thus largely decreasing nonradiative recombination. Additionally, the F− ion preferentially accumulates at hole transport layer/perovskite interface with high SnF2 content, leading to more defects. This work provides in‐depth insights into the roles of SnF2 additives in low‐bandgap SnPb films and devices, assisting in further investigations into multiple additives and approaches to obtain efficient low‐bandgap PSCs.

The past decade has witnessed rapid development of perovskite solar cells (PSCs), the record power conversion efficiency (PCE) of which has been rapidly boosted from the initial 3.8% to a...

We have developed quantitative and spatially resolved imaging techniques to identify the origin of nonradiative-radiative recombination and carrier transport losses in perovskite solar cells, offering potential for future real-time tracking of the lab-scaled devices and fast assessment of screening the large-area modules. By dual-chloride passivation strategy, the resulting 25.49 cm 2 perovskite solar module achieves a certified power conversion efficiency of 17.88%.

Interface engineering is imperative to boost the extraction capability in perovskite solar cells (PSCs). We propose a promising approach to enhance the electron mobility and charge transfer ability of tin oxide (SnO2) electron transport layer (ETL) by introducing a two-dimensional carbide (MXene) with strong interface interaction. The MXene-modified SnO2 ETL also offers a preferable growth platform for perovskite films with reduced trap density. Through a spatially resolved imaging technique, profoundly reduced non-radiative recombination and charge transport losses in PSCs based on MXene-modified SnO2 are also observed. As a result, the PSC achieves an enhanced efficiency of 20.65% with ultralow saturated current density and negligible hysteresis. We provide an in-depth mechanistic understanding of MXene interface engineering, offering an alternative approach to obtain efficient PSCs.

Solution-processed MXene–perovskite image sensor arrays are realized by a top-down method, which combine desirable manufacturing advantages and state-of-the-art performance metrics.