Although the magnetoelectric effects - the mutual control of electric polarization by magnetic fields and magnetism by electric fields, have been intensively studied in a large number of inorganic compounds and heterostructures, they have been rarely observed in organic materials. Here we demonstrate magnetoelectric coupling in a metal-organic framework [(CH3)2NH2]Mn(HCOO)3 which exhibits an order-disorder type of ferroelectricity below 185 K. The magnetic susceptibility starts to deviate from the Curie-Weiss law at the paraelectric-ferroelectric transition temperature, suggesting an enhancement of short-range magnetic correlation in the ferroelectric state. Electron spin resonance study further confirms that the magnetic state indeed changes following the ferroelectric phase transition. Inversely, the ferroelectric polarization can be improved by applying high magnetic fields. We interpret the magnetoelectric coupling in the paramagnetic state in the metal-organic framework as a consequence of the magnetoelastic effect that modifies both the superexchange interaction and the hydrogen bonding.

The structural and magnetic properties of ferromagnetic nanotubes fabricated by a low cost electrodeposition method are investigated. The fabrication of various elemental ferromagnetic materials are described, such as Fe, Co, and Ni, and ferromagnetic alloys, such as NiFe, CoPt, CoFeB, and CoCrPt nanotube arrays, in aluminum oxide templates and polycarbonate membranes with different diameters, wall thicknesses, and lengths. The structural, magnetic, and magnetization reversal properties of these nanotubes are investigated as a function of the geometrical parameters. The angular dependence of the coercivity indicates a transition from the curling to the coherent mode for the ferromagnetic nanotubes. The results show that nanotube fabrication allows the outer and inner diameter, length, and thickness of the nanotubes to be tuned systematically. The magnetization processes of ferromagnetic nanotubes are influenced by the wall thickness.

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

A series of experimental data was obtained systematically for a spin-valve-type tunnel junction of Ta ͑5 nm͒/Ni 79 Fe 21 ͑3 nm͒/Cu ͑20 nm͒/Ni 79 Fe 21 ͑3 nm͒/Ir 22 Mn 78 ͑10 nm͒/Co 75 Fe 25 ͑4 nm͒/Al ͑0.8 nm͒-oxide/ Co 75 Fe 25 ͑4 nm͒/Ni 79 Fe 21 ͑20 nm͒/Ta ͑5 nm͒. Analyses of ͑i͒ temperature dependence of tunnel magnetoresistance ͑TMR͒ ratio and resistance from 4.2 K to room temperature, ͑ii͒ applied dc bias-voltage dependence of TMR ratio and resistance at 6.0 K and room temperature, and ͑iii͒ tunnel current I and dynamic conductance (dI/dV) as functions of dc bias voltage at 6.0 K were carried out. High-TMR ratio of 64.7% at 4.2 K and 44.2% at room temperature were observed for this junction after annealing at 300°C for an hour. An anisotropic wavelength cutoff energy of spin-wave spectrum in magnetic tunnel junctions, which is essential for self-consistent calculations, was suggested based on a series of inelastic electron tunnel spectra obtained. The main intrinsic magnetoelectric properties in such spin-valve-type tunnel junction with high magnetoresistance and low resistance can be evaluated based on the magnon-assisted inelastic excitation model and theory.

The magnetic switching of ferromagnetic nanotubes as function of geometrical parameters has been investigated. The modes of magnetization reversal are observed to depend on the geometry of the nanotubes. Time dependent magnetization properties reveal that the nanotubes have strong magnetic viscosity effects. The values of magnetic viscosity coefficient ͑S͒ for different applied fields are high near the coercive field.

Temperature dependence of tunnel magnetoresistance (TMR) ratio, resistance, and coercivity from 4.2 K to room temperature and applied voltage dependence of the TMR ratio and resistance at room temperature for a tunnel junction, Ta (5 nm)/Ni79Fe21 (3 nm)/Cu (20 nm)/Ni79Fe21 (3 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/Al (0.8 nm)-oxide/Co75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta(5 nm), were investigated. TMR ratio, effective barrier height and width, and breakdown voltage of the junction can be remarkably enhanced after annealing at 300 °C for an hour. High TMR ratio of 49.7% at room temperature and 69.1% at 4.2 K were observed. The value of spin polarization of Co75Fe25, P=50.7%, deduced from the TMR ratio at 4.2 K was corresponding well to the experimental data measured at 0.2 K in a spin polarized tunneling experiment using a superconductor/insulator/ferromagnet tunneling junction.

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We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al 2 O 3 barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.