Samsung Mobile Display has developed a full color 40″ FHD AM‐OLED display, the largest OLED display ever reported to data. It was based on the technologies of Low temperature poly‐Silicon (LTPS) TFT backplane using Super Grain Silicon (SGS) crystallization method, and power line IR‐drop cancellation pixel circuit. Through this designed panel, we can estimate the possibility of large‐Size and high‐resolution AMOLED panel as TV applications.
In this paper, we describe the technologies for implementation of the world's largest Active Matrix Organic Light‐Emitting Diode (AMOLED) TV. Low Temperature Poly‐Silicon (LTPS) method is applied to integrate driver and pixel circuit in panel. Also, we used Fine Metal Mask (FMM) for color patterned R,G,B pixels. for achieving better color gamut, we applied bottom‐emission micro‐cavity structure. As a result, we have fabricated 31‐inch Full‐HD(1920×l080) AMOLED display. The power consumption is less than 40W, which it displays motion picture. We achieved excellent performance like color gamut over 100%, contrast ratio over 1,000,000:1, life time over 35,000hrs, 200cd/m2 white brightness (peak brightness is 550 cd/m2). We now remarkably achieved a slim TV set under 1cm thickness. The module thickness including electronic devices is only 4.3mm with aluminum frame.
Samsung SDI has developed a full color 5.0″ WVGA AMOLED display using top emission structure with a super fine pitch of 0.1365 mm 186 ppi, the world's highest density OLED display ever reported to date. Scan driver circuits and demux circuits were integrated within the display panel, using low temperature poly‐Si TFT CMOS technologies, and data driver circuits were mounted using COG IC. Peak luminescence was greater than 300 cd/ with power consumption of 500 mW with 30% of the pixels on.
Amorphous silicon (a‐Si) was crystallized by silicide mediated crystallization (SMC) using a very thin metal layer on a‐Si. Such structure can be crystallized by annealing for 30 min at 420 °C in the presence of an electric field of 100 V/cm. The poly‐Si TFT was fabricated using a triple layers of SMC poly‐Si, silicon‐nitride (SiNx), and a‐Si:H. The TFT exhibited a field effect mobility of 24 cm2/Vs and a threshold voltage of 1V, and an on/off current ratio of ∼105. The SMC poly‐Si TFT is very suitable for the production of large‐area, high quality liquid crystal displays.
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