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This paper describes the properties of surface-barrier photocells on silicon. In particular, data are given on photocurrent versus light intensity, photocurrent versus reverse bias voltage, open-circuit photovoltage versus light intensity, open-circuit photovoltage versus wavelength of light, open-circuit photovoltage versus temperature, and photocurrent versus temperature. An interesting multiplication effect of optically excited carriers is observed at lower temperatures. The theory of the surface-barrier photoeffect is further generalized.

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