1959
DOI: 10.1103/physrev.116.84
|View full text |Cite
|
Sign up to set email alerts
|

Depletion-Layer Photoeffects in Semiconductors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

16
438
1
11

Year Published

2002
2002
2018
2018

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 1,000 publications
(466 citation statements)
references
References 2 publications
16
438
1
11
Order By: Relevance
“…In principle, for solar cells that benefit from a sufficiently short dielectric relaxation time, there are two main mechanisms of charge extraction 14 . One is charge separation followed by drift through a depletion layer that is formed at a contact-semiconductor interface or a p-n junction.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…In principle, for solar cells that benefit from a sufficiently short dielectric relaxation time, there are two main mechanisms of charge extraction 14 . One is charge separation followed by drift through a depletion layer that is formed at a contact-semiconductor interface or a p-n junction.…”
mentioning
confidence: 99%
“…The successful operation of CQDs in an efficient solar cell is strongly dependent on the material-processing strategies used in film formation. When CQD are synthesized in solution, they are usually capped by organic molecules that employ long chains (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) carbons) to avoid agglomeration. Optimum photovoltaic operation of the CQD film requires the replacement of such ligands with short organic bidentate linkers, such as ethanedithiol or mercaptopropionic acid (MPA).…”
mentioning
confidence: 99%
“…The electron-hole pair can still recombine and reduce the process efficiency 11 . On the other hand, this recombination could be avoided by means of the n-and p-type semiconductors coupling as ZnO and CuO respectively, generating a depletion zone in the interface, becoming more difficulty the charge return to the ground state 12 . Zinc oxide is non-stoichiometric (Zn 1+δ O) n-type semiconductor with the electrons excess that creates a donor band and favors the electron jump to the conduction band 13 .…”
Section: Introductionmentioning
confidence: 99%
“…However, several studies have found evidence for unintentional doping [12][13][14][15][16][17][18][19] and discussed the consequences for device behaviour 6,[20][21][22][23][24][25][26][27][28][29][30] . Whilst the origin of this doping is unclear 15 , its effects on photovoltaic performance can be substantial; however many recent analyses of device performance neglect doping 8,[31][32][33] despite the fact that the influence of doping and the electric field on charge carrier collection is well known for a long time 34 and wellstudied for instance in the field of quantum dot photovoltaics 35,36 .…”
mentioning
confidence: 99%