Spectral Distribution of the Photomagnetoelectric Effect in Semiconductors: Theory

Photoferroelectric Nanowires

“…27b). These characteristics are typical for the case of surface recombination of the excess carriers (Gärtner, 1957). The change of recombination velocity with the increase of excess carrier concentration evokes the cumbersome theoretical description of nonlinear dependence of I PC on the illumination intensity.…”

“…ambipolar carrier diffusion length L, surface recombination velocities s 1 and s 2 at the front and back surfaces of the sample) for each intensity of illumination (Szałajko & Nowak, 2007). In such a case, the I PC can be described by the theory presented in for example (Gärtner, 1957) …”

On the Origin of High Photovoltages in Semiconductors

“…It is difficult to explain the dependence of the sign of HPVE on wavelength of the exciting light. I n our opinion this property may be explained by the conception on the anomalous transverse Dember effect [28]. If the surface recombination on the illuminated side of the film is greater than on an unilluminated one, the diffusion flow of photocarriers in the cells changes its sign when the strong absorption changes to weak one.…”

Fast Response Solid State Pme Detector for Laser Signals

“…A number of theories (7,8) for specialized cases of the P•!. effect have been advanced recently, particularly for thick samples.…”