We experimentally generate and characterize the eigenstates of the Wigner-Smith time-delay matrix, called principal modes, in a multimode fiber with strong mode coupling. The unique spectral and temporal properties of principal modes enable a global control of the temporal dynamics of optical pulses transmitted through the fiber, despite random mode mixing. Our analysis reveals that the well-defined delay time of the eigenstates are formed by multi-path interference, which can be effectively manipulated by the spatial degrees of freedom of the input wavefront. This study is essential to controlling the dynamics of wave scattering, paving the way for coherent control of pulse propagation through complex media.

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Light-modulated transparent memristors combining photoresponse and data storage are promising as multifunctional devices. Herein, a multicolor light-modulated transparent memristor based on black phosphorous (BP) is designed, fabricated, and investigated. BP is a class of emerging two-dimensional (2D) materials with a natural direct band gap and a broad light absorption. Herein, BP nanosheets (BP@PS NSs) coated with polystyrene (PS) are prepared and serve as the resistive switching (RS) layer in the ITO/BP@PS/ITO memristor, which shows >75% transmittance between 350 and 1100 nm. With the aid of PS, the BP@PS-based memristor has excellent RS characteristics such as no initial preforming, low operating voltage, and long retention time. According to the energy band model, the RS mechanism of the high and low resistance states contributes to the transformation from ohmic contact to Schottky contact. During light illumination ranging from ultraviolet (380 nm) to near infrared (785 nm), the Schottky barrier height is elevated further so that the resetting voltages and power consumption decrease. Moreover, the ON/OFF ratios are improved and the maximum enhancement is demonstrated to be more than 10 times. BP is a promising RS material in light-modulated memristors, and the novel device configuration provides insights into the development of multifunctional microelectronic devices based on 2D materials.

Multimode optical fibers have seen increasing applications in communication, imaging, high-power lasers, and amplifiers. However, inherent imperfections and environmental perturbations cause random polarization and mode mixing, causing the output polarization states to be different from the input polarization states. This difference poses a serious issue for employing polarization-sensitive techniques to control light–matter interactions or nonlinear optical processes at the distal end of a fiber probe. Here, we demonstrate complete control of polarization states for all output channels by only manipulating the spatial wavefront of a laser beam into the fiber. Arbitrary polarization states for individual output channels are generated by wavefront shaping without constraining the input polarization. The strong coupling between the spatial and polarization degrees of freedom in a multimode fiber enables full polarization control with the spatial degrees of freedom alone; thus, wavefront shaping can transform a multimode fiber into a highly efficient reconfigurable matrix of waveplates for imaging and communication applications.

using artificial synapses is an essential step to accomplish the neuromorphic computing system. [9,10] Formerly, artificial synapses were realized by complementary metal-oxide-semiconductor (CMOS) circuitry containing dozens of electronic components. [11] However, many electronic components result in complicated architecture and high energy consumption. As comparison, two-terminal memristors, especially resistive random access memory and phase change random access memory, that recently entered our field of vision have been widely discussed as artificial synapses owing to their structures which is similar to that of synapses and the reproducible tuning of resistance. [12][13][14][15][16] Also, for an ideal synapse device it is better to meet these requirements, such as symmetric potentiation-depression characteristics, 5-bit/cell analog levels, and high non-volatility with ≈100 conductance ON/OFF ratio. They are the key points we need to take into account. [17,18] In particular, HfO 2 -based memristors have been demonstrated as a leading alternative as synapse in virtue of its distinctive superiority, such as simple structure, <10 ns switching speed, <10 pJ power consumption, multilevel ability, and compatibility with CMOS fabrication process. [19][20][21] However, the resistance contrast (ON/OFF ratio) of HfO 2 -based memristors ranges from ≈40 to ≈150. [22] Considering the resistance fluctuation of these memristors across a silicon wafer, larger ON/OFF ratio is needed to guarantee high recognition accuracy (>97%). [23] Recently, several works were reported on improvement of the memristors' performance with thin interfacial layer. [24][25][26] As one of the most important multiferroic materials, bismuth iron oxide with perovskite structure has come into notice for its potential in multifunctional device applications. [27] Moreover, BiFeO 3 (BFO) has attracted much attention because it possesses superior characteristics of resistance switching (RS) such as large ON/OFF ratio in some researches. [28] It is also confirmed that BFO can be applied in bi-layer design memristor to significantly improve RS characteristics, [29] which gives inspiration to insert BFO thin film as the goal of high device performances.In this work, ultrathin BFO film was inserted to fabricate Pt/BFO/HfO 2 /TiN memristor to improve the RS characteristic of HfO 2 -based memristor. The material characterization and RS behavior were systemically analyzed. The role of the inserting BFO layer on the RS behavior was evaluated and the RS mechanism triggered by inserting BFO film was explored.HfO 2 -based memristors that remembers the history of the current that has passed through them have attracted great interest for use as artificial synapses in neuromorphic systems. However, the low resistance contrast exhibited by HfO 2 -based memristors seriously decreases their recognition accuracy. By inserting a 2 nm BiFeO 3 layer a large memory window of 10 4 and remarkable pulse endurance of 10 8 cycles are achieved. Multilevel storage capability is also d...

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We present experimental and numerical studies on principal modes in a multimode fiber with mode coupling. By applying external stress to the fiber and gradually adjusting the stress, we have realized a transition from weak to strong mode coupling, which corresponds to the transition from single scattering to multiple scattering in mode space. Our experiments show that principal modes have distinct spatial and spectral characteristic in the weak and strong mode coupling regimes. We also investigate the bandwidth of the principal modes, in particular, the dependence of the bandwidth on the delay time, and the effects of the mode-dependent loss. By analyzing the path-length distributions, we discover two distinct mechanisms that are responsible for the bandwidth of principal modes in weak and strong mode coupling regimes. Their interplay leads to a non-monotonic transition of the average principal mode bandwidth from weak to strong mode coupling. Taking into account the mode-dependent loss in the fiber, our numerical results are in qualitative agreement with our experimental observations. Our study paves the way for exploring potential applications of principal modes in communication, imaging and spectroscopy.

our brain would solve this dilemma, that is, the von Neumann bottleneck. Thus, neuromorphic engineering comes into being. Basically, data-driven neuromorphic engineering needs to complete a large number of data processing tasks. Presently, one of the main tasks in the state-ofthe-art neuromorphic computing system is to optimize neuromorphic algorithm. Due to the use of von Neumann architecture, such neuromorphic systems always consume extremely high energy. In fact, our brain nervous system is consisted of ≈10 11 neurons connected by ≈10 15 synapses. [3] Neurons and synapses are basic units in brain information processing. Brain cognitive behaviors occur through synaptic responses and neural functions. And the synaptic plasticity is the most important characteristics of synapse. Such architecture makes our brain operate in extremely high energy efficiency with certain fault tolerance to respond to our surroundings. Thus, brain-inspired neuromorphic devices have been proposed for mimicking biological synaptic responses and neural functions. [4][5][6] It is getting a new branch for neuromorphic engineering.Recently, with the developments of microelectronics, optoelectronics, and material technologies, solid-state neuromorphic devices have been proposed to mimic biological synaptic functions. Such devices include two-terminal resistance change memory devices [7][8][9][10] and field-effect transistor based neuromorphic transistors. [11][12][13][14][15] Due to the simple sandwich structure, two-terminal memristors have the inherent priority in 3D integrity. They have been widely investigated for high density storage applications. [16,17] With nonlinear electrical characteristics and nonvolatile resistance modulation effects, two-terminal memristors are very suitable for neuromorphic device applications. Such devices include ferroelectric random access memory (FeRAM), phase change random access memory (PCRAM), resistive random access memory (RRAM), etc. [18][19][20][21][22] In fact, most of the recent reported neuromorphic devices are based on two-terminal memristors. Especially with the deep understanding of the operation mechanisms of memristors, neural operation and typical Modified National Institute of Standards and Technology (MNIST) pattern recognition have also been demonstrated by using memristor arrays. [23][24][25] In addition, energy consumption is another important index in neuromorphic device applications. Recently, several works have been reported on neuromorphic device with low energy consumption. [26][27][28][29][30] Xu et al. [26] obtained organic nanowire synaptic transistors with energy consumption of ≈1.23 fJ per Recently, neuromorphic devices have attracted great attention due to their potential to overcome the von Neumann bottleneck. Due to their nonlinear electrical characteristics and nonvolatile resistance, memristors have been proposed for use in neuromorphic device applications. Bilayered HfO 2 /TiO x -based cognitive memristors are proposed. They demonstrate conductance-modulation capabilit...