(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.
Lead zirconate titanate thick films with thickness of 1-3μm have been prepared by a sol-gel process. Influence of film thickness on microstructures and dielectric properties of the films were investigated. The film thickness dependent of microstructures was studied by XRD and Raman spectrum. The PZT films were dense and possessed preferential crystal orientation. Ferroelectricity and dielectric properties were confirmed by P–E hysteresis loops and C-E measurements. The dielectric constant and dielectric loss of the film with thickness of 3.045μm were 2000 and 0.055, respectively. The decrease of the coercive field and the increase of the remanent polarization with the increase in thickness were observed. As film thickness was increasing, PZT thick films had higher (110)-preferred growth orientation and excellent dielectric and ferroelectric properties.
By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3(PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films was studied by X-ray diffraction (XRD) analyses. The electric field-induced AFE-FE phase transformation behavior of the PLZT thin films,was examined by polarization versus field (P-E) and relative permittivity versus field (C-E) measurements, with priority focused on thickness-dependent phase switching field. The current by the polarization and depolarization of polar in the PLZT films was measured through current density-electric field (J-E) measurement. With the increase of film thickness, the maximum polarization less and less, the maximum current density is increasing.
Pb0.97La0.02Zr0.95Ti0.05O3(PLZT) antiferroelectric thin films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The influences of annealing temperature on the structures and dielectric properties of the PLZT antiferroelectric thin films were investigated. And the phase structure and crystal orientation were studied by X-ray diffraction analyses (XRD). The antiferroelectric characterization of the PLZT thin films annealed at different temperature was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field) curves. The maximum polarizations for the films annealed at 650°C, 700°C and 750°C were 35μC/cm2, 42μC/cm2and 47μC/cm2, respectively. The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, 100 and 1000 kHz. The films annealed at 700°C have high (100)-preferred orientation and excellent dielectric properties.
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