Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Jiang, An Quan; Geng, Wen Ping; Lv, Peng; Hong, Jiawang; Jiang, Jun; Wang, Chao; Chai, Xiao; Lian, Jie; Zhang, Yan; Zhang, David Wei; Scott, J. F.; Hwang, Cheol Seong

doi:10.1038/s41563-020-0702-z

Cited by 109 publications

(132 citation statements)

References 47 publications

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“…Figure 3g shows the comparison of the present study (near both charged and neutral domain walls) and several representative works of charged domain walls from both the directly measured current values and the as-calculated conductivity/ conductance/current density points of view (see Table S1, Supporting Information, for more details). [9,[23][24][25][26]36,49,50] There are two main implications from Figure 3g: i) the performance of the neutral domain walls in the present work is surprisingly comparable to those of previously reported charged domain walls; (ii) the current density of the charged domain wall is to the best of our knowledge the largest to date.…”

Section: Giant Domain Wall Currents and Metallic-like Behavior In Bifeo 3 Nanocrystalssupporting

confidence: 80%

“…Temperature is known to modify the domain wall conductivity, allowing a better understanding of the underlying mechanism of the observed giant domain wall conductivity (note that two main processes of conduction, thermally activated and non-thermally activated can be deconvolved during temperature and f) persistent current values near neutral domain walls, and charged domain walls, respectively. g) Comparison of the present result with several representative works from the point of view of domain wall currents, conductivity, conductance, and current densities; [9,[23][24][25][26]36,49,50] The domain wall currents were measured directly while the calculations of the corresponding conductivity/conductance/current density has been shown in Table S1, Supporting Information. The measurements were carried out at room temperature.…”

Section: Giant Domain Wall Currents and Metallic-like Behavior In Bifeo 3 Nanocrystalsmentioning

confidence: 69%

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Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals

Kuangdi

et al. 2020

Adv Funct Materials

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Ever‐increasing demand on electronic devices with ultrahigh‐density non‐volatile data storage has attracted great interest in novel ferroelectric memories based on conductive ferroelectric domain walls. Embedded in an insulating material, ferroelectric domain walls have the capability of being (re)created, displaced, erased, and altered in their spatial configurations and electronic characteristics. However, the domain wall conductivities are in most cases not yet sufficiently high to ensure the current density required to drive read‐out circuits operating at high speeds. In this work, a giant domain wall current (>10 µA) of a single charged domain wall is obtained through conductive atomic force microscopy with a bias field of 4 V. This is achieved in self‐assembled BiFeO3 nanocrystals grown by sol‐gel method on Nb‐doped SrTiO3 substrates. Local configurations of domains and domain wall types are studied using vector piezoresponse force microscopy and high‐resolution transmission electronic microscopy. The enhancement of the wall current is shown to be due to the formation of conducting pathways of charged defects accumulated along domain walls and traversing the nanocrystals. The diverse domain walls can be manipulated by electric field in a perpendicular architecture. The perpendicular array structure of BiFeO3 nanocrystals should have great potentials for developing perpendicular nanoelectronic prototypes.

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Section: Giant Domain Wall Currents and Metallic-like Behavior In Bifeo 3 Nanocrystalssupporting

confidence: 80%

Section: Giant Domain Wall Currents and Metallic-like Behavior In Bifeo 3 Nanocrystalsmentioning

confidence: 69%

Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals

Kuangdi

et al. 2020

Adv Funct Materials

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“…[13][14][15][16][17] However, till now, only HZO-based gate stack 2D NC-FETs can obtain ultralow SS (<10 mV dec −1 ) and quasi-free hysteresis simultaneously. [14] As a ferroelectric materials system with excellent ferroelectric and electro-optic properties, single crystal LiNbO 3 (LNO) has attracted huge attention, [25][26][27][28] which shows the largest spontaneous polarization (50-80 µC cm −2 ) and possesses unique ferroelectric domains direction with only the +c and the −c. Recently, owing to full-fledged preparation of high-quality single crystal LNO thin film by ion-implanted method, the CMOS-compatible LNO integrated system is realized and becomes a promising candidate for future electronic and optical integrated chips.…”

Section: Doi: 101002/adma202005353mentioning

confidence: 99%

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

et al. 2020

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Power consumption is one of the most challenging bottlenecks for complementary metal‐oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy‐efficient devices. However, it is a great challenge to achieving ultralow‐subthreshold‐swing (SS) (10 mV dec−1) and small‐hysteresis NC‐FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow‐SS NC‐FET with small hysteresis is designed. The LiNbO3 NC‐FET platform exhibits a record‐low SS of 4.97 mV dec−1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch), drain–sourse bias (Vds), and gate bias (Vg)) of devices, an optimized SS from ≈40 to ≈10 mV dec−1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy‐efficient devices.

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“…Ferroelectrics hold the promise to revolutionize low‐power logic, nonvolatile memories, actuators, sensors, and electro‐optics for waveguide devices. [ 1–24 ] These applications require suitable control and manipulation of ferroelectric domains and domain walls in ferroelectric thin films. Since 180° polarization switching was accomplished in 4.8 nm thick tetragonal BaTiO 3 thin films via mechanical manipulation, [ 25 ] considerable effort has been devoted to manipulating the polarization switching in ferroelectric thin films, for example, 3–5 nm thick PbZr 0.2 Ti 0.8 O 3 (001) film, 1.6–45 nm thick BaTiO 3 (001) film, 50 nm thick PbZr 0.1 Ti 0.9 O 3 (001) film, and 10 nm thick PbZr 0.48 Ti 0.52 O 3 (001) film, and flexoelectric effect is proposed to explain the mechanical manipulation of the domain and domain wall structures.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Hou

Chen

et al. 2021

Adv Funct Materials

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Ferroelectric materials feature a switchable spontaneous electric polarization and can enable low-power logic and nonvolatile memories. These applications require reliable and precise control of ferroelectric domains and domain walls in ferroelectric thin films. Mechanical manipulation is a promising route to engineer ferroelectric domains, but it has proved ineffective when going beyond a critical thickness. Here, multi-step 90° switching polarization reversal processes in ( 111)-oriented PbZr 0.2 Ti 0.8 O 3 thin films by applying mechanical forces along the direction parallel to the domain bands are reported. By probing the interrelationships between the relevant order parameters, coupled lattice distortion and piezoelectricity is revealed to facilitate domain switching from downward to upward in PbZr 0.2 Ti 0.8 O 3 , a mechanism that is supported by the evolution of domains and electrical performances at different temperatures and under varying pressures, respectively. The multistep domain reversal processes render PbZr 0.2 Ti 0.8 O 3 thin films an excellent candidate for multilevel data storage. The study's results have implications for the manipulation of polarization switching in ferroelectrics and open an avenue to domain reversal driven by mechanical loads for the development of next-generation ferroelectric devices.

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Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Cited by 109 publications

References 47 publications

Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals

Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

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Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Cited by 109 publications

References 47 publications

Giant Domain Wall Conductivity in Self‐Assembled BiFeO3 Nanocrystals

Giant Domain Wall Conductivity in Self‐Assembled BiFeO3 Nanocrystals

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

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Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals

Giant Domain Wall Conductivity in Self‐Assembled BiFeO₃ Nanocrystals