Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O₃ Antiferroelectric Thick Films Prepared by Different Sintering Procedures

Abstract

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

Effects of thickness on switching current for (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films under thermo‐electric coupled field

“…(Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 AFE thick films were prepared by sol–gel method, which was similar to our previous works [19, 20]. [Pb(CH 3 COO) 2 ·3H 2 O], [La(CH 3 COO) 3 ·H 2 O], [Zr(OC 3 H 7 ) 4 ] and [Ti[OCH(CH 3 ) 2 ] 4 ] were selected as the raw materials.…”

“…2. Preparation of thick films: (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 AFE thick films were prepared by sol-gel method, which was similar to our previous works [19,20]…”

High‐frequency vibration characteristic of Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 anti‐ferroelectric thick films cantilever

“…Step 1 indicated the sol-gel deposition process of PLZT AFE thick films in our early papers [21,22], where the film thickness was about 2 μm.…”

“…The following are the main fabricant steps of five PLZT cantilevers arrays in five different sizes integrated into one wafer. Step 1 indicated the sol–gel deposition process of PLZT AFE thick films in our early papers [21, 22], where the film thickness was about 2 μm.…”

“…However, few were reported on AFE material application in micro-actuators, especially on the AFE thick-film technique. Due to our early work, we have successfully achieved the preparation technique of the Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 (PLZT) thick films deposited on Pt (111)/Ti/SiO 2 /Si(100) substrates, which have strong (111) orientation preferred and excellent dielectric characteristics [19][20][21]. To continue our work, the micro-cantilever structure was adopted as the drive unit of micro-actuators.…”