Out-of-plane actuation of silicon micro-cantilever based on (Pb, La) (Zr, Ti)O3 antiferroelectric thick films

Li, Jun; An, Kun; Liu, Li; He, Jian; Chou, Xiujian; Chen, Xue

doi:10.1007/s10854-015-3950-y

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…(b)所示，高于传统的 FE 和电致伸缩材料 [120,121] 。早在 1968 年，Berlincourt 等人就讨论了利用 AFE 材料的大电致应变特性制造水声换能器的可行性，指出基于 AFE 的换能器具有结构简单、尺寸小、重量轻等优点 [122] 。近年来，基于 AFE 薄膜的微执行器因其结构简单、性能优异而被广泛报道 [37][38][39] ，Xiujian Chou 等设计了基于反铁电(Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 厚膜微悬臂结构，在 40V 电压的激励下，悬臂梁的振动速度高达 6767mm/s，悬臂梁尖端位移 45.7μm [123] 。此外，对于一些场诱导下处于亚稳态铁电相的反铁电组分，电场诱导的相变会伴随记忆效应，即当撤除电场后，材料仍"记忆"为铁电状态(残留有较大的剩余应变) ，无法恢复成 AFE 的状态，这种铁电状态只能通过温度或者反向电场进行消除，这就是所谓的记忆效应 [41] ，如图 9 (c-d) 所示。 AFE 表现出更快的响应时间 (～100 kHz)…”

Section: ，由于材料的极化值会根据温度的变化而发生改变，从而间接计算出材料的电卡效应，施unclassified

Research status and prospect of lead zirconate-based antiferroelectric films

Zhang¹,

Si²,

Li³

et al. 2023

Acta Phys. Sin.

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It has been nearly 70 years since the first discovery of anti-ferroelectric. The unique electric field induced phase transition behaviors show great potential in the field of energy storage, electrocaloric, negative capacitance, thermal switching, <i>etc</i>. With the development of advanced synthesis technology and the trend of miniaturization and integration of devices, more and more attentions have been paid to high quality functional oxide films. A large number of studies have shown that anti-ferroelectric thin film shows more novel properties than bulks, but it also faces more challenges, such as:strain by lattice mismatch, size effect, <i>etc</i>. In this review, the development history of lead zirconate based anti-ferroelectric is reviewed, and the structure, phase transition and application of anti-ferroelectric are discussed. We hope that this paper will attract more researchers to pay attention to the development of anti-ferroelectric, and jointly develop more new materials and explore new applications.

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Section: ，由于材料的极化值会根据温度的变化而发生改变，从而间接计算出材料的电卡效应，施unclassified

Research status and prospect of lead zirconate-based antiferroelectric films

Zhang¹,

Si²,

Li³

et al. 2023

Acta Phys. Sin.

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“…In our earlier work, the micro-cantilever structure based on the (Pb,La)(Zr,Ti)O 3 (PLZT) thick film was fabricated successfully [21,22]. In this paper, the performance of the natural frequency shift of micro-cantilevers was studied, including vibration simulation and measurement, the relationship between driving voltage and natural frequency, and the transducing characteristics, which were tested and analyzed.…”

Section: Introductionmentioning

confidence: 99%

Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers

Jin

Xiao

et al. 2018

Sensors

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Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

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Hysteresis modeling of antiferroelectric micro-cantilever with anticommutative multilayer perceptrons

Yang

et al. 2021

Ferroelectrics

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Out-of-plane actuation of silicon micro-cantilever based on (Pb, La) (Zr, Ti)O3 antiferroelectric thick films

Cited by 3 publications

References 14 publications

Research status and prospect of lead zirconate-based antiferroelectric films

Research status and prospect of lead zirconate-based antiferroelectric films

Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers

Hysteresis modeling of antiferroelectric micro-cantilever with anticommutative multilayer perceptrons

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