High performance molybdenum-doped indium oxide (IMO) films were deposited on slide glass substrates from metallic targets by using dc reactive magnetron sputtering at room temperature. The structural, electrical and optical properties have been investigated as functions of target composition and oxygen partial pressure. The deposited films were smooth and amorphous, as determined by scanning electron microscopy and x-ray diffraction, respectively. The results revealed that the as-deposited molybdenum-doped In 2 O 3 films show good electrical property and high optical transmittance, as well as high infrared transmittance. The films prepared at oxygen partial pressure of 3.8 × 10 −2 Pa and with 2 wt% Mo-doped target are characteristic of high Hall mobility of 20.2 cm 2 V −1 s −1 , carrier concentration of 5.2 × 10 20 cm −3 , and the average optical transmittance excess 90% in the visible region from 400 to 700 nm. Thus IMO films may be a potential material for novel optoelectrical devices such as an organic light-emitting diode.

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High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.

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Analysis on thermal properties of tin doped indium oxide films by picosecond thermoreflectance measurementMolybdenum-doped indium oxide In 2 O 3 :Mo ͑IMO͒ thin films were deposited on glass substrates by a technique called channel spark ablation. The structure, surface morphology, electrical, and optical properties of these films were investigated by x-ray diffraction, atomic force microscopy ͑AFM͒, four-point probe, ultraviolet photoelectron spectroscopy ͑UPS͒, Hall analysis, and spectrophotometry. The influence of oxygen pressure on the electrical properties of IMO thin films prepared at T s = 350°C was studied, showing that increasing oxygen pressure changes the resistivity concavely and the carrier concentration convexly. The IMO films as deposited are well crystallized with a preferred orientation of ͑222͒ and the surface roughness evaluated in terms of Rrms, Ra, and Rp-v measured by AFM is 0.72, 0.44, and 15.4 nm, respectively. The lowest resistivity and corresponding carrier concentration are 4.8ϫ 10 −4 ⍀ cm and 7.1ϫ 10 20 cm −3 . The typical work function of IMO is 4.6 eV measured by UPS. For all the samples, the average transmittance in the visible region is more than 87%.