Transparent conductive oxide thin films of tungsten-doped indium oxide

Li, Xifeng; Zhang, Qun; Miao, Weina; Huang, Li; Zhang, Zhuangjian

doi:10.1016/j.tsf.2006.07.014

Cited by 45 publications

(17 citation statements)

References 15 publications

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“…The mobility change in W doped oxide semiconductors was correlated to the ionic impurities in lattice and the presence of grain boundaries [14,16]. The enhancement in scattering of the carriers by the W atoms in SnO 2 lattice due to the presence of the ionic impurities was also mentioned in the study of Huang et al [14].…”

Section: Resultsmentioning

confidence: 91%

“…The structural and electrical analyses proved that the W þ 6 ions in thin film bonded with O À 2 anion causes 4 electrons to be unbounded. These electrons enhance the carrier concentrations, as observed for W doped In 2 O 3 and SnO 2 thin films [14][15][16]. However, the change of carrier concentration with temperature was different for the thin films of pure and W doped ZnO samples whereas W doped ZnO behaved as typical semiconductors [17]; the carrier concentration in pure ZnO increased with decreasing temperature.…”

Section: Resultsmentioning

confidence: 98%

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Magnetoelectrical properties of W doped ZnO thin films

Can

Fırat

Shah

2012

Journal of Magnetism and Magnetic Materials

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 98%

Magnetoelectrical properties of W doped ZnO thin films

Can

Fırat

Shah

2012

Journal of Magnetism and Magnetic Materials

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“…It has been shown that the electrical properties of In 2 O 3 can be drastically changed by doping with Sn, Mo [105,106], Zr, Ti [107,108], and W [109]. .…”

Section: In 2 O 3 -Basedmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

116

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Metal oxides are widely used in many applications such as thermoelectric, solar cells, sensors, transistors, and optoelectronic devices due to their outstanding mechanical, chemical, electrical, and optical properties. For instance, their high Seebeck coefficient, high thermal stability, and earth abundancy make them suitable for thermoelectric power generation, particularly at a high-temperature regime. In this article, we review the recent advances of developing high electrical properties of metal oxides and their applications in thermoelectric, solar cells, sensors, and other optoelectronic devices. The materials examined include both narrow-band-gap (e.g., Na x CoO 2 , Ca 3 Co 4 O 9 , BiCuSeO, CaMnO 3 , SrTiO 3 ) and wide-band-gap materials (e.g., ZnO-based, SnO 2 -based, In 2 O 3 -based). Unlike previous review articles, the focus of this study is on identifying an effective doping mechanism of different metal oxides to reach a high power factor. Effective dopants and doping strategies to achieve high carrier concentration and high electrical conductivities are highlighted in this review to enable the advanced applications of metal oxides in thermoelectric power generation and beyond.

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“…The experiment showed that various doping additives such as Sn [143][144][145], Ti [71], Zr [146,147], Mo [148], W [149] and Ge [70] can be used for these purposes. It is important to note here that with such doping it is possible to reach an exceptionally high carrier mobility in In 2 O 3 -based oxides even with a carrier concentration higher than 10 20 cm −3 (see Table 1).…”

Section: Electrophysical Propertiesmentioning

confidence: 99%

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

Brînzari

Ham

2018

Crystals

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Abstract:In this paper, the thermoelectric properties of In 2 O 3 -based materials in comparison with other thermoelectric materials are considered. It is shown that nanostructured In 2 O 3 Sn-based oxides are promising for thermoelectric applications at moderate temperatures. Due to the nanostructure, specific surface properties of In 2 O 3 and filtering effects, it is possible to significantly reduce the thermal conductivity and achieve an efficiency of thermoelectric conversion inaccessible to bulk materials. It is also shown that a specific surface state at the intergrain boundary, optimal for maximizing the filtering effect, can be achieved through (1) the engineering of grain boundary parameters, (2) controlling the composition of the surrounding atmosphere, and (3) selecting the appropriate operating temperature.

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Transparent conductive oxide thin films of tungsten-doped indium oxide

Cited by 45 publications

References 15 publications

Magnetoelectrical properties of W doped ZnO thin films

Magnetoelectrical properties of W doped ZnO thin films

Metal oxides for thermoelectric power generation and beyond

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

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