In this study, two types of ZnO-based multilayer varistor (MLV) with two different dielectric layers (12 and 24 µm), sintered from 900 to 1000 °C for 2 h were prepared to investigate the effects of microstructure such as the grain size and number of grain boundaries between two adjourn electrodes on electrical properties. The results show that the grain size linearly increases with sintering temperature, which results in an increase in the capacitance of ZnO-based MLVs. In contrast, the number of grain boundaries between two adjourn electrodes linearly decreases with sintering temperature associated with a decrease in breakdown voltage, leakage current and nonlinear coefficient of ZnO-based MLVs. The energy absorption capabilities determined from the peak current (PC) measurements of ZnO-based MLVs with sintering temperature are reported. The optimum peak currents of ZnO-based MLVs can be obtained by sintering at 950 °C.
To attain the homogeneous microstructure of ZnO-based multilayer varistors (MLVs), hot-press sintering is conducted. To determine the effect of hot-press sintering on the microstructure, the dielectric and varistor properties of ZnO-based MLVs were investigated and compared with those of ZnO-based MLVs fabricated by free sintering. In hot-press sintering, the average grain size and the distribution of grain size of a ZnO-based MLVs are both reduced. The results show that the leakage current and nonlinear coefficient ( α) of ZnO-based MLVs can be improved. The increase in nonlinear coefficient ( α) is directly related to the inhibition of grain growth of ZnO grains when hot-press sintering is performed instead of free sintering. Note that the energy absorption capabilities in terms of peak current (PC) measurements of ZnO-based MLVs are remarkably improved due to the homogeneity of microstructure when hot-press sintering is conducted.
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