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In the semiconductor metallization process, the superior gap-fill capability of copper ͑Cu͒ electroplating is mainly due to external additives, such as bis-͑3-sodiumsulfopropyl disulfide͒ ͑SPS͒, which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing ͑CMP͒ process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process.

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The preparation of nanocomposite as gate dielectric film was carried out by blending polyimide and nano-TiO 2 particle to enhance the capacitance of gate dielectric. When the concentration of the nano-TiO 2 particle was less than 2 vol % and was well dispersed in polyimide slurry, a nanocomposite film with a homogeneous distribution of nano-TiO 2 particles in polyimide and low roughness was obtained after curing at 200 C, resulting in low leakage current density of the nanocomposite film and high on/off ratio of the organic thin film transistor (OTFT) device. A strong correlation between the morphology and electrical properties of the nanocomposite gate dielectric film is reflected in the OTFT device performance. Because capacitance of the gate dielectric film and proportion of thin film phase of the pentacene both increased when the pentacene was deposited on a nanocomposite gate dielectric film, the mobility and the threshold voltage of OTFT noticeably improved.

In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper ͑Cu͒ seeds and tantalum nitride ͑TaN x ͒ barriers deposited with different N 2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the TaN x films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-TaN x electrochemical system. It is found that the charge-transfer resistance of the TaN x galvanic corrosion increases with the N 2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the TaN x films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the TaN x films to the Cu seeds is retarded by the N element ͓C.

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We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol) (PVP) matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.