Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO(3), the material widely investigated for microwave devices in which the dielectric constant (epsilon(r)) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T(c) in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T(c) by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T(c) is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high epsilon(r) at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB 2 phase thermodynamically stable can be achieved for the in situ growth of MgB 2 thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like T c of 39 K, a J c (4.2K) of 1.2 × 10 7 A/cm 2 in zero field, and a H c2 (0) of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB 2 films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB 2 .

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 superlattices are not only ferroelectric (with T c as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO 3 layers adjacent to them. T c was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO 3 and SrTiO 3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

We report a significant enhancement of the upper critical field H c2 of different MgB 2 samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities ρ, we show a clear trend of H c2 increase as ρ increases. One particular high resistivity film had zero-temperature H c2 (0) well above the H c2 values of competing non-cuprate superconductors such as Nb 3 Sn and Nb-Ti. Our high-field transport measurements give record values H c2 ⊥ (0) ≈ 34T and H c2 || (0) ≈ 49 T for high resistivity films and H c2 (0) ≈ 29 T for untextured bulk polycrystals. The highest H c2 film also exhibits a significant upward curvature of H c2 (T), and temperature dependence of the anisotropy parameter γ(T) = H c2 || / H c2⊥ opposite to that of single crystals: γ(T) decreases as the temperature decreases, from γ(T c ) ≈ 2 to γ(0) ≈ 1.5. This remarkable H c2 enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in MgB 2 , which offers special opportunities for further H c2 increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of H c2 (T) observed suggest that MgB 2 can be made into a versatile, competitive high-field superconductor.

The first five members of the Sr nϩ1 Ti n O 3nϩ1 Ruddlesden-Popper homologous series, i.e.

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Arrays of perpendicular ferromagnetic nanowires have recently attracted considerable interest for their potential use in many areas of advanced nanotechnology. We report a simple approach to create self-assembled nanowires of alpha-Fe through the decomposition of a suitably chosen perovskite. We illustrate the principle behind this approach using the reaction 2La(0.5)Sr(0.5)FeO(3) --> LaSrFeO(4) + Fe + O(2) that occurs during the deposition of La(0.5)Sr(0.5)FeO(3) under reducing conditions. This leads to the spontaneous formation of an array of single-crystalline alpha-Fe nanowires embedded in LaSrFeO(4) matrix, which grow perpendicular to the substrate and span the entire film thickness. The diameter and spacing of the nanowires are controlled directly by deposition temperature. The nanowires show uniaxial anisotropy normal to the film plane and magnetization close to that of bulk alpha-Fe. The high magnetization and sizable coercivity of the nanowires make them desirable for high-density data storage and other magnetic-device applications.

Out-of-phase boundaries (OPBs) are translation boundary defects characterized by a misregistry of a fraction of a unit cell dimension in neighboring regions of a crystal. Although rarely observed in the bulk, they are common in epitaxial films of complex crystals due to the physical constraint of the underlying substrate and a low degree of structural rearrangement during growth. OPBs can strongly affect properties, but no extensive studies of them are available. The morphology, structure, and nucleation mechanisms of OPBs in epitaxial films of layered complex oxides are presented with a review of published studies and new work. Morphological trends in two families of layered oxide phases are described. The atomic structure at OPBs is presented. OPBs may be introduced into a film during growth via the primary mechanisms that occur at film nucleation (steric, nucleation layer, a-bmisfit, and inclined-cmisfit) or after growth via the secondary nucleation mechanism (crystallographic shear in response to loss of a volatile component). Mechanism descriptions are accompanied by experimental examples. Alternative methods to the direct imaging of OPBs are also presented.