Extrinsic atoms were doped into multiwalled carbon nanotubes (MWCNTs) using microwave plasma-enhanced chemical vapor deposition. Doped nitrogen atoms alter the original parallel graphenes into highly curved ones including some fullerene-like structures. Doped nitrogen atoms could replace carbon atoms in MWCNTs and therefore increase the electronic density that enhances the electron field emission properties. On the other hand, the incorporation of boron into the carbon network apparently increases the concentration of electron holes that become electron traps and eventually impedes the electron field emission properties. Fowler-Nordheim plots show two different slopes in the curve, indicating that the mechanism of field emission is changed from low to high bias voltages. beta values could be increased by an amount of 42% under low bias voltages and 60% under high bias voltages in the N-doped MWCNTs, but decreased by an amount of 8% under low bias region and 68% under high bias voltage in the B-doped MWCNTs. (C) 2003 American Institute of Physics

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