The large-scale fabrication of high-performance on-chip micro-supercapacitors (MSCs) is the footstone for the development of next-generation miniaturized electronic devices. In practical applications, however, MSCs may suffer from a low areal energy density as well as a complicated fabrication strategy that is incompatible with semiconductor processing technology. Herein, we propose a scalable fabrication strategy for the realization of a silicon-based three-dimensional (3D) all-solid-state MSC via the combination of semiconductor-based electrode processing, chemical vapor deposition, and hydrothermal growth. The individual Si/C/MnO 2 electrode shows a maximum specific capacitance of 223.74 mF cm −2 , while the symmetric electrodes present a maximum areal energy density of 5.01 μWh cm −2 at the scan rate of 1 mV s −1 . The full 3D Si/C/MnO 2 MSC delivers a high energy density of 2.62 μWh cm −2 , at a power density of 117.82 μW cm −2 , as well as a long cycle life with capacitance retention >92% after 4000 cycles. Our proposed method enables the fabrication of 3D MSCs based on a thick silicon interdigitated electrode array, holding a great promise for the development of 3D on-chip microscale energy storage devices.

Extrinsic atoms were doped into multiwalled carbon nanotubes (MWCNTs) using microwave plasma-enhanced chemical vapor deposition. Doped nitrogen atoms alter the original parallel graphenes into highly curved ones including some fullerene-like structures. Doped nitrogen atoms could replace carbon atoms in MWCNTs and therefore increase the electronic density that enhances the electron field emission properties. On the other hand, the incorporation of boron into the carbon network apparently increases the concentration of electron holes that become electron traps and eventually impedes the electron field emission properties. Fowler-Nordheim plots show two different slopes in the curve, indicating that the mechanism of field emission is changed from low to high bias voltages. beta values could be increased by an amount of 42% under low bias voltages and 60% under high bias voltages in the N-doped MWCNTs, but decreased by an amount of 8% under low bias region and 68% under high bias voltage in the B-doped MWCNTs. (C) 2003 American Institute of Physics

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Flexible ultra-wideband terahertz absorber based on vertically aligned carbon nanotubes

The ability to regulate the tilt angle of Si nanostructures is important for their applications in photoelectric devices. Herein we demonstrate a facile method to precisely regulate the tilt angle of nanocones with metal-assisted chemical etching (MaCE) in a one-step process based on the systematic investigation of the formation mechanism of the tilt angle. With Au nanohole arrays as templates, the tilt angles of Si nanocone arrays can be tuned from 69.2° to 88.6° by varying the composition of the etchant. When the Si nanocone arrays are the same height (2.2 μm), the reflectivity decreases with the decreasing of the tilt angle. When the tilt angle is 83.0°, the average reflectivity is lowered to 1.37% in the 250-1000 nm range. This method can be applied for fabrication over a large area (as large as 2 cm × 2 cm). This chemical method should be applicable to other Si nanostructures, which may promote the applications of MaCE in semiconductor manufacturing.